IRFIZ44GPBF MOSFET Datasheet: N-Ch, 60V, 30A. Full specification with pinout and replacement list

IRFIZ44GPBF Specs and Replacement

Type Designator: IRFIZ44GPBF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 48 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 30 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 120 nS

Cossⓘ - Output Capacitance: 1200 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm

Package: TO220F

IRFIZ44GPBF substitution

- MOSFET ⓘ Cross-Reference Search

IRFIZ44GPBF datasheet

..1. Size:1392K international rectifier
irfiz44g irfiz44gpbf.pdf pdf_icon

IRFIZ44G, SiHFIZ44G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 60 Available High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) ( )VGS = 10 V 0.028 f = 60 Hz) RoHS* Qg (Max.) (nC) 95 COMPLIANT Sink to Lead Creepage Distance = 4.8 mm Qgs (nC) 27 175 C Operating Temperature Qgd (nC) 46 Dynamic dV/dt Rating Configurat... See More ⇒

6.1. Size:170K international rectifier
irfiz44g.pdf pdf_icon

... See More ⇒

6.2. Size:1390K vishay
irfiz44g sihfiz44g.pdf pdf_icon

6.3. Size:274K inchange semiconductor
irfiz44g.pdf pdf_icon

iscN-Channel MOSFET Transistor IRFIZ44G FEATURES Low drain-source on-resistance RDS(ON) 28m @V =10V GS Enhancement mode Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETE... See More ⇒

Detailed specifications: IRFIZ24EPBF , IRFIZ24G , IRFIZ24GPBF , IRFIZ24NPBF , IRFIZ34G , IRFIZ34GPBF , IRFIZ34NPBF , IRFIZ44G , NCEP15T14 , IRFIZ44NPBF , IRFIZ46NPBF , IRFIZ48G , IRFIZ48GPBF , IRFIZ48NPBF , IRFIZ48VPBF , IRFB7430 , IRFB7434 .