IRFB7530
MOSFET. Datasheet pdf. Equivalent
Type Designator: IRFB7530
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 375
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.7
V
|Id|ⓘ - Maximum Drain Current: 295
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 274
nC
trⓘ - Rise Time: 141
nS
Cossⓘ -
Output Capacitance: 1266
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.002
Ohm
Package:
TO220AB
IRFB7530
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRFB7530
Datasheet (PDF)
..1. Size:655K international rectifier
irfb7530 irfs7530pbf irfsl7530pbf.pdf 
StrongIRFET IRFB7530PbF IRFS7530PbF IRFSL7530PbF HEXFET Power MOSFET Application Brushed Motor drive applications VDSS 60V D BLDC Motor drive applications Battery powered circuits RDS(on) typ. 1.65m Half-bridge and full-bridge topologies max 2.00mG Synchronous rectifier applications ID (Silicon Limited) 295A
..2. Size:655K infineon
irfb7530pbf irfs7530pbf irfsl7530pbf.pdf
StrongIRFET IRFB7530PbF IRFS7530PbF IRFSL7530PbF HEXFET Power MOSFET Application Brushed Motor drive applications VDSS 60V D BLDC Motor drive applications Battery powered circuits RDS(on) typ. 1.65m Half-bridge and full-bridge topologies max 2.00mG Synchronous rectifier applications ID (Silicon Limited) 295A
..3. Size:245K inchange semiconductor
irfb7530.pdf
isc N-Channel MOSFET Transistor IRFB7530,IIRFB7530FEATURESStatic drain-source on-resistance:RDS(on) 2mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBO
7.1. Size:656K international rectifier
irfb7534 irfs7534pbf irfsl7534pbf.pdf
StrongIRFET IRFB7534PbF IRFS7534PbF IRFSL7534PbF HEXFET Power MOSFET Application Brushed Motor drive applications VDSS 60V D BLDC Motor drive applications Battery powered circuits RDS(on) typ. 2.0m Half-bridge and full-bridge topologies max 2.4mG Synchronous rectifier applications ID (Silicon Limited) 232A
7.2. Size:654K international rectifier
irfb7537 irfs7537pbf irfsl7537pbf.pdf
StrongIRFET IRFB7537PbF IRFS7537PbF IRFSL7537PbF HEXFET Power MOSFET Application Brushed Motor drive applications D VDSS 60V BLDC Motor drive applications Battery powered circuits RDS(on) typ. 2.75m Half-bridge and full-bridge topologies G Synchronous rectifier applications max 3.30m Resonant mode power sup
7.3. Size:245K inchange semiconductor
irfb7537.pdf
isc N-Channel MOSFET Transistor IRFB7537,IIRFB7537FEATURESStatic drain-source on-resistance:RDS(on) 3.3mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSynchronous Rectifier applicationsResonant mode power suppliesBattery powered circuitsABSOL
7.4. Size:245K inchange semiconductor
irfb7534.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFB7534IIRFB7534FEATURESStatic drain-source on-resistance:RDS(on) 2.4mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM
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