IRFB7787 Datasheet and Replacement
Type Designator: IRFB7787
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pd ⓘ
- Maximum Power Dissipation: 125
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 75
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.7
V
|Id| ⓘ - Maximum Drain Current: 76
A
Tj ⓘ - Maximum Junction Temperature: 175
°C
Qg ⓘ - Total Gate Charge: 73
nC
tr ⓘ - Rise Time: 48
nS
Cossⓘ -
Output Capacitance: 330
pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0084
Ohm
Package:
TO220AB
-
MOSFET ⓘ Cross-Reference Search
IRFB7787 Datasheet (PDF)
..1. Size:667K international rectifier
irfb7787 irfs7787pbf irfsl7787pbf.pdf 
StrongIRFET IRFB7787PbF IRFS7787PbF IRFSL7787PbF HEXFET Power MOSFET Application Brushed Motor drive applications D VDSS 75V BLDC Motor drive applications Battery powered circuits RDS(on) typ. 6.9m Half-bridge and full-bridge topologies G Synchronous rectifier applications max 8.4m Resonant mode power suppl
..2. Size:985K international rectifier
irfb7787pbf irfs7787pbf irfsl7787pbf.pdf
StrongIRFET IRFB7787PbF IRFS7787PbF IRFSL7787PbF HEXFET Power MOSFET Application Brushed Motor drive applications D VDSS 75V BLDC Motor drive applications Battery powered circuits RDS(on) typ. 6.9m Half-bridge and full-bridge topologies G Synchronous rectifier applications max 8.4m Resonant mode power supplies S OR-ing
..3. Size:246K inchange semiconductor
irfb7787.pdf
isc N-Channel MOSFET Transistor IRFB7787,IIRFB7787FEATURESStatic drain-source on-resistance:RDS(on) 8.4mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSynchronous Rectifier applicationsResonant mode power suppliesBattery powered circuitsABSOL
8.1. Size:530K international rectifier
irfb7740.pdf
StrongIRFET IRFB7740PbF HEXFET Power MOSFET Application Brushed Motor drive applications D VDSS 75V BLDC Motor drive applications Battery powered circuits RDS(on) typ. 6.0m Half-bridge and full-bridge topologies G Synchronous rectifier applications max 7.3m Resonant mode power supplies S OR-ing and redun
8.2. Size:653K international rectifier
irfb7734pbf irfs7734pbf irfsl7734pbf.pdf
StrongIRFET IRFB7734PbF IRFS7734PbF IRFSL7734PbF HEXFET Power MOSFET Application Brushed motor drive applications VDSS 75V D BLDC motor drive applications Battery powered circuits RDS(on) typ. 2.8m Half-bridge and full-bridge topologies G Synchronous rectifier applications max 3.5m Resonant mode power supp
8.3. Size:529K international rectifier
irfb7746.pdf
StrongIRFET IRFB7746PbF HEXFET Power MOSFET Application Brushed motor drive applications D VDSS 75V BLDC motor drive applications Battery powered circuits RDS(on) typ. 9.0m Half-bridge and full-bridge topologies G Synchronous rectifier applications max 10.6m Resonant mode power supplies S OR-ing and red
8.4. Size:657K international rectifier
irfb7730 irfs7730pbf irfsl7730pbf.pdf
StrongIRFET IRFB7730PbF IRFS7730PbF IRFSL7730PbF HEXFET Power MOSFET Application Brushed motor drive applications VDSS 75V D BLDC motor drive applications Battery powered circuits RDS(on) typ. 2.2m Half-bridge and full-bridge topologies max 2.6mG Synchronous rectifier applications ID (Silicon Limited) 246A
8.5. Size:650K international rectifier
irfb7734 irfs7734pbf irfsl7734pbf.pdf
StrongIRFET IRFB7734PbF IRFS7734PbF IRFSL7734PbF HEXFET Power MOSFET Application Brushed motor drive applications VDSS 75V D BLDC motor drive applications Battery powered circuits RDS(on) typ. 2.8m Half-bridge and full-bridge topologies G Synchronous rectifier applications max 3.5m Resonant mode power supp
8.6. Size:657K international rectifier
irfb7730pbf irfs7730pbf irfsl7730pbf.pdf
StrongIRFET IRFB7730PbF IRFS7730PbF IRFSL7730PbF HEXFET Power MOSFET Application Brushed motor drive applications VDSS 75V D BLDC motor drive applications Battery powered circuits RDS(on) typ. 2.2m Half-bridge and full-bridge topologies max 2.6mG Synchronous rectifier applications ID (Silicon Limited) 246A
8.7. Size:245K inchange semiconductor
irfb7740.pdf
isc N-Channel MOSFET Transistor IRFB7740IIRFB7740FEATURESStatic drain-source on-resistance:RDS(on) 7.3mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T =25)a
8.8. Size:245K inchange semiconductor
irfb7746.pdf
isc N-Channel MOSFET Transistor IRFB7746IIRFB7746FEATURESStatic drain-source on-resistance:RDS(on) 10.6mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T =25)a
8.9. Size:246K inchange semiconductor
irfb7734.pdf
isc N-Channel MOSFET Transistor IRFB7734,IIRFB7734FEATURESStatic drain-source on-resistance:RDS(on) 3.5mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSynchronous Rectifier applicationsResonant mode power suppliesBattery powered circuitsABSOL
8.10. Size:246K inchange semiconductor
irfb7730.pdf
isc N-Channel MOSFET Transistor IRFB7730,IIRFB7730FEATURESStatic drain-source on-resistance:RDS(on) 2.6mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSynchronous Rectifier applicationsResonant mode power suppliesBattery powered circuitsABSOL
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