IRFR110PBF
MOSFET. Datasheet pdf. Equivalent
Type Designator: IRFR110PBF
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 25
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 4.3
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 8.3
nC
trⓘ - Rise Time: 16
nS
Cossⓘ -
Output Capacitance: 80
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.54
Ohm
Package:
TO252
IRFR110PBF
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRFR110PBF
Datasheet (PDF)
..1. Size:1868K international rectifier
irfr110pbf irfu110pbf.pdf 
PD - 95026AIRFR110PbFIRFU110PbF Lead-Free12/14/04Document Number: 91265 www.vishay.com1IRFR/U110PbFDocument Number: 91265 www.vishay.com2IRFR/U110PbFDocument Number: 91265 www.vishay.com3IRFR/U110PbFDocument Number: 91265 www.vishay.com4IRFR/U110PbFDocument Number: 91265 www.vishay.com5IRFR/U110PbFDocument Number: 91265 www.vishay.com6IRFR/U1
..2. Size:1479K vishay
irfr110pbf sihfr110.pdf
IRFR110, SiHFR110Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 100Definition Dynamic dV/dt RatingRDS(on) ()VGS = 10 V 0.54 Repetitive Avalanche RatedQg (Max.) (nC) 8.3 Surface Mount (IRFR110, SiHFR110)Qgs (nC) 2.3 Available in Tape and ReelQgd (nC) 3.8 Fast SwitchingConfiguration Single
7.3. Size:255K fairchild semi
irfr110a irfu110a.pdf
IRFR/U110AAdvanced Power MOSFETFEATURESBVDSS = 100 V Avalanche Rugged TechnologyRDS(on) = 0.4 Rugged Gate Oxide Technology Lower Input CapacitanceID = 4.7 A Improved Gate Charge Extended Safe Operating AreaD-PAK I-PAK Lower Leakage Current : 10 A (Max.) @ VDS = 100V Lower RDS(ON) : 0.289 (Typ.) 2112331. Gate 2. Drain 3. SourceAbsolute Maxim
7.4. Size:496K samsung
irfr110a.pdf
Advanced Power MOSFETFEATURESBVDSS = 100 V Avalanche Rugged TechnologyRDS(on) = 0.4 Rugged Gate Oxide Technology Lower Input CapacitanceID = 4.7 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 100V Lower RDS(ON) : 0.289 (Typ.) 2112331. Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Charact
7.5. Size:1455K vishay
irfr110 sihfr110.pdf
IRFR110, SiHFR110Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 100Definition Dynamic dV/dt RatingRDS(on) ()VGS = 10 V 0.54 Repetitive Avalanche RatedQg (Max.) (nC) 8.3 Surface Mount (IRFR110, SiHFR110)Qgs (nC) 2.3 Available in Tape and ReelQgd (nC) 3.8 Fast SwitchingConfiguration Single
7.6. Size:862K cn vbsemi
irfr110tr.pdf
IRFR110TRwww.VBsemi.twN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Junction Temperature1000.11 4 at VGS = 10 V15 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Primary Side SwitchDTO-252 GSG D S N-Channel MOSFETABSOLUTE MAXIMUM RATINGS
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