All MOSFET. IRFP150FI Datasheet

 

IRFP150FI MOSFET. Datasheet pdf. Equivalent

Type Designator: IRFP150FI

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 65 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 40 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 110(max) nC

Rise Time (tr): 100(max) nS

Drain-Source Capacitance (Cd): 1500(max) pF

Maximum Drain-Source On-State Resistance (Rds): 0.055 Ohm

Package: ISOWATT218

IRFP150FI Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRFP150FI Datasheet (PDF)

7.1. irfp150 irfp151 irfp152 irfp153-fi.pdf Size:487K _st

IRFP150FI
IRFP150FI

7.2. irfp150a.pdf Size:261K _fairchild_semi

IRFP150FI
IRFP150FI

IRFP150AAdvanced Power MOSFETFEATURESBVDSS = 100 V Avalanche Rugged TechnologyRDS(on) = 0.04 Rugged Gate Oxide Technology Lower Input CapacitanceID = 43 A Improved Gate Charge Extended Safe Operating AreaTO-3P 175 C Operating TemperatureA (Max.) @ VDS = 100V Lower Leakage Current : 10 Lower RDS(ON) : 0.032 (Typ.) 1231.Gate 2. Drain 3. Source

 7.3. irfp150n.pdf Size:135K _international_rectifier

IRFP150FI
IRFP150FI

PD- 91503CIRFP150NHEXFET Power MOSFET Advanced Process TechnologyD Dynamic dv/dt RatingVDSS = 100V 175C Operating Temperature Fast SwitchingRDS(on) = 0.036W Fully Avalanche RatedGID = 42ADescriptionSFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon area. Thisbenefi

7.4. irfp150.pdf Size:167K _international_rectifier

IRFP150FI
IRFP150FI

 7.5. irfp150pbf.pdf Size:1994K _international_rectifier

IRFP150FI
IRFP150FI

PD - 95003IRFP150PbF Lead-Free2/11/04Document Number: 91203 www.vishay.com1IRFP150PbFDocument Number: 91203 www.vishay.com2IRFP150PbFDocument Number: 91203 www.vishay.com3IRFP150PbFDocument Number: 91203 www.vishay.com4IRFP150PbFDocument Number: 91203 www.vishay.com5IRFP150PbFDocument Number: 91203 www.vishay.com6IRFP150PbFTO-247AC Package Ou

7.6. irfp150mpbf.pdf Size:1141K _international_rectifier

IRFP150FI
IRFP150FI

PD - 96291IRFP150MPbF Lead-Freewww.irf.com 103/01/10IRFP150MPbF2 www.irf.comIRFP150MPbFwww.irf.com 3IRFP150MPbF4 www.irf.comIRFP150MPbFwww.irf.com 5IRFP150MPbF6 www.irf.comIRFP150MPbFwww.irf.com 7IRFP150MPbFTO-247AC Package Outline (Dimensions are shown in millimeters (inches))TO-247AC Part Marking InformationData and specifications subject

7.7. irfp150npbf.pdf Size:1024K _international_rectifier

IRFP150FI
IRFP150FI

PD - 95002IRFP150NPbF Lead-Freewww.irf.com 12/11/04IRFP150NPbF2 www.irf.comIRFP150NPbFwww.irf.com 3IRFP150NPbF4 www.irf.comIRFP150NPbFwww.irf.com 5IRFP150NPbF6 www.irf.comIRFP150NPbFwww.irf.com 7IRFP150NPbFTO-247AC Package OutlineDimensions are shown in millimeters (inches)- D -3.65 (.143)5.30 (.209)15.90 (.626) 3.55 (.140)4.70 (.185)1

7.8. irfp150v.pdf Size:520K _international_rectifier

IRFP150FI
IRFP150FI

PD - 94459AIRFP150VHEXFET Power MOSFETl Advanced Process TechnologyDVDSS = 100Vl Ultra Low On-Resistancel Dynamic dv/dt Ratingl 175C Operating TemperatureRDS(on) = 24mGl Fast Switchingl Fully Avalanche RatedID = 47ASDescriptionAdvanced HEXFET Power MOSFETs from International Rectifier utilizeadvanced processing techniques to achieve extremely low on-re

7.9. irfp150a.pdf Size:957K _samsung

IRFP150FI
IRFP150FI

Advanced Power MOSFETFEATURESBVDSS = 100 V Avalanche Rugged TechnologyRDS(on) = 0.04 Rugged Gate Oxide Technology Lower Input CapacitanceID = 43 A Improved Gate Charge Extended Safe Operating Area 175 Operating Temperature Lower Leakage Current : 10 A (Max.) @ VDS = 100V 1 Lower RDS(ON) : 0.032 (Typ.)231.Gate 2. Drain 3. SourceAbsolute Maximum R

7.10. irfp150 sihfp150.pdf Size:1470K _vishay

IRFP150FI
IRFP150FI

IRFP150, SiHFP150Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 100 Repetitive Avalanche RatedAvailableRDS(on) ()VGS = 10 V 0.055 Isolated Central Mounting HoleRoHS*Qg (Max.) (nC) 140 175 C Operating TemperatureCOMPLIANTQgs (nC) 29 Fast SwitchingQgd (nC) 68 Ease of ParallelingConfiguration Single S

7.11. irfp150mpbf.pdf Size:1141K _infineon

IRFP150FI
IRFP150FI

PD - 96291IRFP150MPbF Lead-Freewww.irf.com 103/01/10IRFP150MPbF2 www.irf.comIRFP150MPbFwww.irf.com 3IRFP150MPbF4 www.irf.comIRFP150MPbFwww.irf.com 5IRFP150MPbF6 www.irf.comIRFP150MPbFwww.irf.com 7IRFP150MPbFTO-247AC Package Outline (Dimensions are shown in millimeters (inches))TO-247AC Part Marking InformationData and specifications subject

7.12. irfp150npbf.pdf Size:1024K _infineon

IRFP150FI
IRFP150FI

PD - 95002IRFP150NPbF Lead-Freewww.irf.com 12/11/04IRFP150NPbF2 www.irf.comIRFP150NPbFwww.irf.com 3IRFP150NPbF4 www.irf.comIRFP150NPbFwww.irf.com 5IRFP150NPbF6 www.irf.comIRFP150NPbFwww.irf.com 7IRFP150NPbFTO-247AC Package OutlineDimensions are shown in millimeters (inches)- D -3.65 (.143)5.30 (.209)15.90 (.626) 3.55 (.140)4.70 (.185)1

7.13. irfp150n.pdf Size:241K _inchange_semiconductor

IRFP150FI
IRFP150FI

isc N-Channel MOSFET Transistor IRFP150NIIRFP150NFEATURESStatic drain-source on-resistance:RDS(on)36mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingFully Avalanche RatedABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source

7.14. irfp150m.pdf Size:241K _inchange_semiconductor

IRFP150FI
IRFP150FI

isc N-Channel MOSFET Transistor IRFP150MIIRFP150MFEATURESStatic drain-source on-resistance:RDS(on)36mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingFully Avalanche RatedABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source

7.15. irfp150.pdf Size:400K _inchange_semiconductor

IRFP150FI
IRFP150FI

iscN-Channel MOSFET Transistor IRFP150FEATURESLow drain-source on-resistance:RDS(ON) 55m @V =10VGSEnhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER

7.16. irfp150a.pdf Size:233K _inchange_semiconductor

IRFP150FI
IRFP150FI

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFP150AFEATURESDrain Current I = 43A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 0.04(Max)DS(on)Fast Switching100% testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode

Datasheet: IRFP140A , IRFP140N , IRFP141 , IRFP142 , IRFP143 , APT50M38JFLL , IRFP150 , IRFP150A , FDS4435 , IRFP150N , IRFP151 , IRFP152 , IRFP153 , IRFP22N50A , IRFP230 , IRFP231 , IRFP232 .

 

 
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