IRFP22N60K Specs and Replacement

Type Designator: IRFP22N60K

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 370 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 22 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 99 nS

Cossⓘ - Output Capacitance: 350 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.28 Ohm

Package: TO247AC

IRFP22N60K substitution

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IRFP22N60K datasheet

 ..1. Size:123K  international rectifier
irfp22n60k.pdf pdf_icon

IRFP22N60K

PD - 94414 IRFP22N60K SMPS MOSFET HEXFET Power MOSFET Applications VDSS RDS(on) typ. ID l Hard Switching Primary or PFS Switch 600V 240m 22A l Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply l High Speed Power Switching l Motor Drive Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Full... See More ⇒

 ..2. Size:179K  vishay
irfp22n60k sihfp22n60k.pdf pdf_icon

IRFP22N60K

IRFP22N60K, SiHFP22N60K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 600 Requirement Available RDS(on) ( )VGS = 10 V 0.24 Improved Gate, Avalanche and Dynamic dV/dt RoHS* Qg (Max.) (nC) 150 COMPLIANT Ruggedness Qgs (nC) 45 Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 76 and Current Co... See More ⇒

 ..3. Size:177K  vishay
irfp22n60k irfp22n60kpbf sihfp22n60k.pdf pdf_icon

IRFP22N60K

IRFP22N60K, SiHFP22N60K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 600 Requirement Available RDS(on) ( )VGS = 10 V 0.24 Improved Gate, Avalanche and Dynamic dV/dt RoHS* Qg (Max.) (nC) 150 COMPLIANT Ruggedness Qgs (nC) 45 Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 76 and Current Co... See More ⇒

 ..4. Size:401K  inchange semiconductor
irfp22n60k.pdf pdf_icon

IRFP22N60K

iscN-Channel MOSFET Transistor IRFP22N60K FEATURES Low drain-source on-resistance RDS(ON) =0.28 (MAX) Enhancement mode Vth = 3.0 to 5.0V (VDS = 10 V, ID=0.25mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VAL... See More ⇒

Detailed specifications: IRFP15N60L, IRFP15N60LPBF, IRFP17N50L, IRFP17N50LPBF, IRFP21N60L, IRFP21N60LPBF, IRFP22N50APBF, IRFP22N60C3PBF, AO3400, IRFP22N60KPBF, IRFP23N50L, IRFP23N50LPBF, IRFP240PBF, IRFP240R, IRFP242R, IRFP244PBF, IRFP250MPBF

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