All MOSFET. IRFP151 Datasheet

 

IRFP151 MOSFET. Datasheet pdf. Equivalent

Type Designator: IRFP151

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 150 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 40 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 110(max) nC

Rise Time (tr): 100(max) nS

Drain-Source Capacitance (Cd): 1500(max) pF

Maximum Drain-Source On-State Resistance (Rds): 0.055 Ohm

Package: TO218

IRFP151 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRFP151 Datasheet (PDF)

 8.1. Size:198K  international rectifier
irfp15n60l.pdf

IRFP151
IRFP151

PD - 94415ASMPS MOSFETIRFP15N60LApplications HEXFET Power MOSFET Zero Voltage Switching SMPSTrr typ.VDSS RDS(on) typ. ID Telecom and Server Power Supplies Uninterruptible Power Supplies600V 385m 130ns 15A Motor Control applicationsFeatures and Benefits SuperFast body diode eliminates the need for externaldiodes in ZVS applications. Lower Gate c

 8.2. Size:135K  international rectifier
irfp150n.pdf

IRFP151
IRFP151

PD- 91503CIRFP150NHEXFET Power MOSFET Advanced Process TechnologyD Dynamic dv/dt RatingVDSS = 100V 175C Operating Temperature Fast SwitchingRDS(on) = 0.036W Fully Avalanche RatedGID = 42ADescriptionSFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon area. Thisbenefi

 8.3. Size:167K  international rectifier
irfp150.pdf

IRFP151
IRFP151

 8.4. Size:1994K  international rectifier
irfp150pbf.pdf

IRFP151
IRFP151

PD - 95003IRFP150PbF Lead-Free2/11/04Document Number: 91203 www.vishay.com1IRFP150PbFDocument Number: 91203 www.vishay.com2IRFP150PbFDocument Number: 91203 www.vishay.com3IRFP150PbFDocument Number: 91203 www.vishay.com4IRFP150PbFDocument Number: 91203 www.vishay.com5IRFP150PbFDocument Number: 91203 www.vishay.com6IRFP150PbFTO-247AC Package Ou

 8.5. Size:1141K  international rectifier
irfp150mpbf.pdf

IRFP151
IRFP151

PD - 96291IRFP150MPbF Lead-Freewww.irf.com 103/01/10IRFP150MPbF2 www.irf.comIRFP150MPbFwww.irf.com 3IRFP150MPbF4 www.irf.comIRFP150MPbFwww.irf.com 5IRFP150MPbF6 www.irf.comIRFP150MPbFwww.irf.com 7IRFP150MPbFTO-247AC Package Outline (Dimensions are shown in millimeters (inches))TO-247AC Part Marking InformationData and specifications subject

 8.6. Size:1024K  international rectifier
irfp150npbf.pdf

IRFP151
IRFP151

PD - 95002IRFP150NPbF Lead-Freewww.irf.com 12/11/04IRFP150NPbF2 www.irf.comIRFP150NPbFwww.irf.com 3IRFP150NPbF4 www.irf.comIRFP150NPbFwww.irf.com 5IRFP150NPbF6 www.irf.comIRFP150NPbFwww.irf.com 7IRFP150NPbFTO-247AC Package OutlineDimensions are shown in millimeters (inches)- D -3.65 (.143)5.30 (.209)15.90 (.626) 3.55 (.140)4.70 (.185)1

 8.7. Size:208K  international rectifier
irfp15n60lpbf.pdf

IRFP151
IRFP151

PD - 95517SMPS MOSFETIRFP15N60LPbFApplications HEXFET Power MOSFET Zero Voltage Switching SMPSTrr typ.VDSS RDS(on) typ. ID Telecom and Server Power Supplies Uninterruptible Power Supplies600V 385m 130ns 15A Motor Control applications Lead-FreeFeatures and Benefits SuperFast body diode eliminates the need for externaldiodes in ZVS applications.

 8.8. Size:520K  international rectifier
irfp150v.pdf

IRFP151
IRFP151

PD - 94459AIRFP150VHEXFET Power MOSFETl Advanced Process TechnologyDVDSS = 100Vl Ultra Low On-Resistancel Dynamic dv/dt Ratingl 175C Operating TemperatureRDS(on) = 24mGl Fast Switchingl Fully Avalanche RatedID = 47ASDescriptionAdvanced HEXFET Power MOSFETs from International Rectifier utilizeadvanced processing techniques to achieve extremely low on-re

 8.9. Size:261K  fairchild semi
irfp150a.pdf

IRFP151
IRFP151

IRFP150AAdvanced Power MOSFETFEATURESBVDSS = 100 V Avalanche Rugged TechnologyRDS(on) = 0.04 Rugged Gate Oxide Technology Lower Input CapacitanceID = 43 A Improved Gate Charge Extended Safe Operating AreaTO-3P 175 C Operating TemperatureA (Max.) @ VDS = 100V Lower Leakage Current : 10 Lower RDS(ON) : 0.032 (Typ.) 1231.Gate 2. Drain 3. Source

 8.10. Size:957K  samsung
irfp150a.pdf

IRFP151
IRFP151

Advanced Power MOSFETFEATURESBVDSS = 100 V Avalanche Rugged TechnologyRDS(on) = 0.04 Rugged Gate Oxide Technology Lower Input CapacitanceID = 43 A Improved Gate Charge Extended Safe Operating Area 175 Operating Temperature Lower Leakage Current : 10 A (Max.) @ VDS = 100V 1 Lower RDS(ON) : 0.032 (Typ.)231.Gate 2. Drain 3. SourceAbsolute Maximum R

 8.11. Size:894K  vishay
irfp150pbf.pdf

IRFP151
IRFP151

PD - 95003IRFP150PbF Lead-Freewww.irf.com 12/11/04IRFP150PbF2 www.irf.comIRFP150PbFwww.irf.com 3IRFP150PbF4 www.irf.comIRFP150PbFwww.irf.com 5IRFP150PbF6 www.irf.comIRFP150PbFTO-247AC Package OutlineDimensions are shown in millimeters (inches)- D -3.65 (.143)5.30 (.209)15.90 (.626) 3.55 (.140)4.70 (.185)15.30 (.602)0.25 (.010) M D B M2.

 8.12. Size:1470K  vishay
irfp150 sihfp150.pdf

IRFP151
IRFP151

IRFP150, SiHFP150Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 100 Repetitive Avalanche RatedAvailableRDS(on) ()VGS = 10 V 0.055 Isolated Central Mounting HoleRoHS*Qg (Max.) (nC) 140 175 C Operating TemperatureCOMPLIANTQgs (nC) 29 Fast SwitchingQgd (nC) 68 Ease of ParallelingConfiguration Single S

 8.13. Size:147K  vishay
irfp15n60lpbf.pdf

IRFP151
IRFP151

IRFP15N60L, SiHFP15N60LVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Superfast Body Diode Eliminates the Need forVDS (V) 600AvailableExternal Diodes in ZVS ApplicationsRDS(on) ()VGS = 10 V 0.385RoHS* Lower Gate Charge Results in Simple DriveQg (Max.) (nC) 100COMPLIANTRequirementsQgs (nC) 30Qgd (nC) 46 Enhanced dV/dt Capabilities Offer Improved

 8.14. Size:1141K  infineon
irfp150mpbf.pdf

IRFP151
IRFP151

PD - 96291IRFP150MPbF Lead-Freewww.irf.com 103/01/10IRFP150MPbF2 www.irf.comIRFP150MPbFwww.irf.com 3IRFP150MPbF4 www.irf.comIRFP150MPbFwww.irf.com 5IRFP150MPbF6 www.irf.comIRFP150MPbFwww.irf.com 7IRFP150MPbFTO-247AC Package Outline (Dimensions are shown in millimeters (inches))TO-247AC Part Marking InformationData and specifications subject

 8.15. Size:1024K  infineon
irfp150npbf.pdf

IRFP151
IRFP151

PD - 95002IRFP150NPbF Lead-Freewww.irf.com 12/11/04IRFP150NPbF2 www.irf.comIRFP150NPbFwww.irf.com 3IRFP150NPbF4 www.irf.comIRFP150NPbFwww.irf.com 5IRFP150NPbF6 www.irf.comIRFP150NPbFwww.irf.com 7IRFP150NPbFTO-247AC Package OutlineDimensions are shown in millimeters (inches)- D -3.65 (.143)5.30 (.209)15.90 (.626) 3.55 (.140)4.70 (.185)1

 8.16. Size:377K  onsemi
irfp150a.pdf

IRFP151
IRFP151

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 8.17. Size:233K  inchange semiconductor
irfp15n60l.pdf

IRFP151
IRFP151

isc N-Channel MOSFET Transistor IRFP15N60LDESCRIPTIONDrain Current I =40A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R =0.46(Max)DS(on)High Power,High Speed ApplicationsMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching power suppliesUPSMotor contro

 8.18. Size:241K  inchange semiconductor
irfp150n.pdf

IRFP151
IRFP151

isc N-Channel MOSFET Transistor IRFP150NIIRFP150NFEATURESStatic drain-source on-resistance:RDS(on)36mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingFully Avalanche RatedABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source

 8.19. Size:241K  inchange semiconductor
irfp150m.pdf

IRFP151
IRFP151

isc N-Channel MOSFET Transistor IRFP150MIIRFP150MFEATURESStatic drain-source on-resistance:RDS(on)36mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingFully Avalanche RatedABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source

 8.20. Size:400K  inchange semiconductor
irfp150.pdf

IRFP151
IRFP151

iscN-Channel MOSFET Transistor IRFP150FEATURESLow drain-source on-resistance:RDS(ON) 55m @V =10VGSEnhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER

 8.21. Size:233K  inchange semiconductor
irfp150a.pdf

IRFP151
IRFP151

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFP150AFEATURESDrain Current I = 43A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 0.04(Max)DS(on)Fast Switching100% testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode

Datasheet: IRFP141 , IRFP142 , IRFP143 , APT50M38JFLL , IRFP150 , IRFP150A , IRFP150FI , IRFP150N , TK8A60DA , IRFP152 , IRFP153 , IRFP22N50A , IRFP230 , IRFP231 , IRFP232 , IRFP233 , APT50M38JLL .

 

 
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