IRFP250NPBF PDF and Equivalents Search

 ..1. Size:180K  international rectifier
 irfp250npbf.pdf

PD - 95007A IRFP250NPbF HEXFET Power MOSFET l Advanced Process Technology l Dynamic dv/dt Rating D VDSS = 200V l 175 C Operating Temperature l Fast Switching l Fully Avalanche Rated RDS(on) = 0.075 G l Ease of Paralleling l Simple Drive Requirements ID = 30A l Lead-Free S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techni... See More ⇒

 ..2. Size:260K  inchange semiconductor
 irfp250npbf.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFP250NPBF FEATURES With TO-247 packaging With low gate drive requirements Easy to drive 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source... See More ⇒

 6.1. Size:122K  international rectifier
 irfp250n.pdf

PD - 94008 IRFP250N HEXFET Power MOSFET Advanced Process Technology D VDSS = 200V Dynamic dv/dt Rating 175 C Operating Temperature Fast Switching RDS(on) = 0.075 G Fully Avalanche Rated Ease of Paralleling ID = 30A S Simple Drive Requirements Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extreme... See More ⇒

 6.2. Size:596K  cn minos
 irfp250n.pdf

200V N-Channel MOSFET Description IRFP250N, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications Schematic diagram FEATURES Proprietary New Planar Technology ... See More ⇒

 6.3. Size:241K  inchange semiconductor
 irfp250n.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFP250N IIRFP250N FEATURES Static drain-source on-resistance RDS(on) 75m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source V... See More ⇒