All MOSFET. IRFP254N Datasheet

 

IRFP254N MOSFET. Datasheet pdf. Equivalent


   Type Designator: IRFP254N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Maximum Power Dissipation (Pd): 220 W
   Maximum Drain-Source Voltage |Vds|: 250 V
   Maximum Gate-Source Voltage |Vgs|: 20 V
   Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
   Maximum Drain Current |Id|: 23 A
   Maximum Junction Temperature (Tj): 175 °C
   Rise Time (tr): 34 nS
   Drain-Source Capacitance (Cd): 260 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.125 Ohm
   Package: TO247

 IRFP254N Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRFP254N Datasheet (PDF)

 ..1. Size:189K  international rectifier
irfp254npbf.pdf

IRFP254N
IRFP254N

PD - 95041IRFP254NPbFHEXFET Power MOSFETl Advanced Process TechnologyDl Dynamic dv/dt Rating VDSS = 250Vl 175C Operating Temperaturel Fast SwitchingRDS(on) = 125ml Fully Avalanche Rated Gl Ease of ParallelingID = 23Al Simple Drive RequirementsSl Lead-FreeDescriptionFifth Generation HEXFETs from International Rectifier utilize advanced processingtechniques

 ..2. Size:222K  international rectifier
irfp254n.pdf

IRFP254N
IRFP254N

PD - 94213IRFP254NHEXFET Power MOSFET Advanced Process TechnologyD Dynamic dv/dt Rating VDSS = 250V 175C Operating Temperature Fast SwitchingRDS(on) = 125m Fully Avalanche Rated G Ease of ParallelingID = 23A Simple Drive RequirementsSDescriptionFifth Generation HEXFETs from International Rectifier utilize advanced processingtechniques to achieve extremely

 ..3. Size:123K  vishay
irfp254n irfp254npbf.pdf

IRFP254N
IRFP254N

IRFP254N, SiHFP254NVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Advanced Process TechnologyVDS (V) 250 Dynamic dV/dt RatingAvailableRDS(on) ()VGS = 10 V 0.125 175 C Operating TemperatureRoHS*COMPLIANTQg (Max.) (nC) 100 Fully Avalanche RatedQgs (nC) 17 Fast SwitchingQgd (nC) 44 Ease of Paralleling Simple Drive RequirementsCo

 ..4. Size:155K  vishay
irfp254n sihfp254n.pdf

IRFP254N
IRFP254N

IRFP254N, SiHFP254NVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Advanced Process TechnologyVDS (V) 250 Dynamic dV/dt RatingAvailableRDS(on) ()VGS = 10 V 0.125 175 C Operating TemperatureRoHS*COMPLIANTQg (Max.) (nC) 100 Fully Avalanche RatedQgs (nC) 17 Fast SwitchingQgd (nC) 44 Ease of Paralleling Simple Drive RequirementsCo

 7.1. Size:1950K  international rectifier
irfp254pbf.pdf

IRFP254N
IRFP254N

PD - 95009IRFP254PbF Lead-Free2/12/04Document Number: 91214 www.vishay.com1IRFP254PbFDocument Number: 91214 www.vishay.com2IRFP254PbFDocument Number: 91214 www.vishay.com3IRFP254PbFDocument Number: 91214 www.vishay.com4IRFP254PbFDocument Number: 91214 www.vishay.com5IRFP254PbFDocument Number: 91214 www.vishay.com6IRFP254PbFTO-247AC Package Ou

 7.2. Size:192K  international rectifier
irfp254 irfp255 irfp256 irfp257.pdf

IRFP254N
IRFP254N

 7.3. Size:162K  international rectifier
irfp254.pdf

IRFP254N
IRFP254N

 7.4. Size:670K  fairchild semi
irfp254b.pdf

IRFP254N
IRFP254N

November 2001IRFP254B250V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 25A, 250V, RDS(on) = 0.14 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 95 nC)planar, DMOS technology. Low Crss ( typical 60 pF)This advanced technology has been especially tailored to Fast s

 7.5. Size:948K  samsung
irfp254a.pdf

IRFP254N
IRFP254N

Advanced Power MOSFETFEATURESBVDSS = 250 V Avalanche Rugged TechnologyRDS(on) = 0.14 Rugged Gate Oxide Technology Lower Input CapacitanceID = 25 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 250V Low RDS(ON) : 0.108 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Valu

 7.6. Size:1519K  vishay
irfp254 sihfp254.pdf

IRFP254N
IRFP254N

IRFP254, SiHFP254Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 250Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.14RoHS* Isolated Central Mounting HoleQg (Max.) (nC) 140 COMPLIANT Fast SwitchingQgs (nC) 24 Ease of ParallelingQgd (nC) 71 Simple Drive RequirementsConfiguration Single Complia

 7.7. Size:192K  no
irfp254-257.pdf

IRFP254N
IRFP254N

 7.8. Size:236K  inchange semiconductor
irfp254.pdf

IRFP254N
IRFP254N

isc N-Channel MOSFET Transistor IRFP254FEATURESDrain Current I = 23A@ T =25D CDrain Source Voltage-: V = 250V(Min)DSSStatic Drain-Source On-Resistance: R = 0.14(Max)DS(on)Fast Switching100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies

 7.9. Size:236K  inchange semiconductor
irfp254a.pdf

IRFP254N
IRFP254N

isc N-Channel MOSFET Transistor IRFP254AFEATURESDrain Current I = 25A@ T =25D CDrain Source Voltage-: V = 250V(Min)DSSStatic Drain-Source On-Resistance: R = 0.14(Max)DS(on)Fast Switching100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 18N50 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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