All MOSFET. IRFP254N Datasheet

 

IRFP254N MOSFET. Datasheet pdf. Equivalent


   Type Designator: IRFP254N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 220 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 23 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 100 nC
   trⓘ - Rise Time: 34 nS
   Cossⓘ - Output Capacitance: 260 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.125 Ohm
   Package: TO247
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IRFP254N Datasheet (PDF)

 ..1. Size:222K  international rectifier
irfp254n.pdf pdf_icon

IRFP254N
IRFP254N

PD - 94213IRFP254NHEXFET Power MOSFET Advanced Process TechnologyD Dynamic dv/dt Rating VDSS = 250V 175C Operating Temperature Fast SwitchingRDS(on) = 125m Fully Avalanche Rated G Ease of ParallelingID = 23A Simple Drive RequirementsSDescriptionFifth Generation HEXFETs from International Rectifier utilize advanced processingtechniques to achieve extremely

 ..2. Size:189K  international rectifier
irfp254npbf.pdf pdf_icon

IRFP254N
IRFP254N

PD - 95041IRFP254NPbFHEXFET Power MOSFETl Advanced Process TechnologyDl Dynamic dv/dt Rating VDSS = 250Vl 175C Operating Temperaturel Fast SwitchingRDS(on) = 125ml Fully Avalanche Rated Gl Ease of ParallelingID = 23Al Simple Drive RequirementsSl Lead-FreeDescriptionFifth Generation HEXFETs from International Rectifier utilize advanced processingtechniques

 ..3. Size:155K  vishay
irfp254n sihfp254n.pdf pdf_icon

IRFP254N
IRFP254N

IRFP254N, SiHFP254NVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Advanced Process TechnologyVDS (V) 250 Dynamic dV/dt RatingAvailableRDS(on) ()VGS = 10 V 0.125 175 C Operating TemperatureRoHS*COMPLIANTQg (Max.) (nC) 100 Fully Avalanche RatedQgs (nC) 17 Fast SwitchingQgd (nC) 44 Ease of Paralleling Simple Drive RequirementsCo

 ..4. Size:123K  vishay
irfp254n irfp254npbf.pdf pdf_icon

IRFP254N
IRFP254N

IRFP254N, SiHFP254NVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Advanced Process TechnologyVDS (V) 250 Dynamic dV/dt RatingAvailableRDS(on) ()VGS = 10 V 0.125 175 C Operating TemperatureRoHS*COMPLIANTQg (Max.) (nC) 100 Fully Avalanche RatedQgs (nC) 17 Fast SwitchingQgd (nC) 44 Ease of Paralleling Simple Drive RequirementsCo

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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