IRFP26N60L Specs and Replacement
Type Designator: IRFP26N60L
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 470 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 26 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 110 nS
Cossⓘ -
Output Capacitance: 450 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.25 Ohm
Package: TO247AC
- MOSFET ⓘ Cross-Reference Search
IRFP26N60L datasheet
..1. Size:192K vishay
irfp26n60l irfp26n60lpbf sihfp26n60l.pdf 
IRFP26N60L, SiHFP26N60L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Superfast Body Diode Eliminates the Need for VDS (V) 600 Available External Diodes in ZVS Applications RDS(on) ( )VGS = 10 V 0.21 RoHS* Lower Gate Charge Results in Simpler Drive Qg (Max.) (nC) 180 COMPLIANT Requirements Qgs (nC) 61 Enhanced dV/dt Capabilities Offer Improved Ruggedness ... See More ⇒
..2. Size:188K vishay
irfp26n60l sihfp26n60l.pdf
IRFP26N60L, SiHFP26N60L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Superfast Body Diode Eliminates the Need for VDS (V) 600 Available External Diodes in ZVS Applications RDS(on) ( )VGS = 10 V 0.21 RoHS* Lower Gate Charge Results in Simpler Drive Qg (Max.) (nC) 180 COMPLIANT Requirements Qgs (nC) 61 Enhanced dV/dt Capabilities Offer Improved Ruggedness ... See More ⇒
..3. Size:400K inchange semiconductor
irfp26n60l.pdf
iscN-Channel MOSFET Transistor IRFP26N60L FEATURES Low drain-source on-resistance RDS(ON) =0.25 (MAX) Enhancement mode Vth = 3.0 to 5.0V (VDS = 10 V, ID=0.25mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VAL... See More ⇒
8.1. Size:888K international rectifier
irfp264.pdf
PD - 94900 IRFP264PbF Lead-Free 12/18/03 Document Number 91217 www.vishay.com 1 IRFP264PbF Document Number 91217 www.vishay.com 2 IRFP264PbF Document Number 91217 www.vishay.com 3 IRFP264PbF Document Number 91217 www.vishay.com 4 IRFP264PbF Document Number 91217 www.vishay.com 5 IRFP264PbF Document Number 91217 www.vishay.com 6 IRFP264PbF TO-247AC Package O... See More ⇒
8.2. Size:158K international rectifier
irfp264npbf.pdf
PD - 94811 IRFP264NPbF HEXFET Power MOSFET Advanced Process Technology D Dynamic dv/dt Rating VDSS = 250V 175 C Operating Temperature Fast Switching RDS(on) = 60m Fully Avalanche Rated G Ease of Paralleling ID = 44A Simple Drive Requirements S Lead-Free Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achi... See More ⇒
8.3. Size:222K international rectifier
irfp264n.pdf
PD - 94214 IRFP264N HEXFET Power MOSFET Advanced Process Technology D Dynamic dv/dt Rating VDSS = 250V 175 C Operating Temperature Fast Switching RDS(on) = 60m Fully Avalanche Rated G Ease of Paralleling ID = 44A Simple Drive Requirements S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely l... See More ⇒
8.4. Size:895K international rectifier
irfp264pbf.pdf
PD - 94900 IRFP264PbF Lead-Free www.irf.com 1 12/18/03 IRFP264PbF 2 www.irf.com IRFP264PbF www.irf.com 3 IRFP264PbF 4 www.irf.com IRFP264PbF www.irf.com 5 IRFP264PbF 6 www.irf.com IRFP264PbF TO-247AC Package Outline Dimensions are shown in millimeters (inches) - D - 3.65 (.143) 5.30 (.209) 15.90 (.626) 3.55 (.140) 4.70 (.185) 15.30 (.602) 0.25 (.010) M D B M 2... See More ⇒
8.5. Size:180K international rectifier
irfp260npbf.pdf
PD - 95010A IRFP260NPbF HEXFET Power MOSFET l Advanced Process Technology D l Dynamic dv/dt Rating VDSS = 200V l 175 C Operating Temperature l Fast Switching RDS(on) = 0.04 l Fully Avalanche Rated G l Ease of Paralleling ID = 50A l Simple Drive Requirements S l Lead-Free Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techni... See More ⇒
8.6. Size:122K international rectifier
irfp260n.pdf
PD - 94004A IRFP260N HEXFET Power MOSFET Advanced Process Technology D VDSS = 200V Dynamic dv/dt Rating 175 C Operating Temperature Fast Switching RDS(on) = 0.04 G Fully Avalanche Rated Ease of Paralleling ID = 50A S Simple Drive Requirements Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extreme... See More ⇒
8.7. Size:1340K international rectifier
irfp260pbf.pdf
PD- 95915 IRFP260PbF Lead-Free 9/27/04 Document Number 91215 www.vishay.com 1 IRFP260PbF Document Number 91215 www.vishay.com 2 IRFP260PbF Document Number 91215 www.vishay.com 3 IRFP260PbF Document Number 91215 www.vishay.com 4 IRFP260PbF Document Number 91215 www.vishay.com 5 IRFP260PbF Document Number 91215 www.vishay.com 6 IRFP260PbF Peak Diode Recovery ... See More ⇒
8.8. Size:207K international rectifier
auirfp2602.pdf
PD - 96420 AUTOMOTIVE GRADE AUIRFP2602 HEXFET Power MOSFET Features Advanced Process Technology D V(BR)DSS 24V Low On-Resistance 175 C Operating Temperature RDS(on) typ. 1.25m Fast Switching max. 1.6m Repetitive Avalanche Allowed up to Tjmax G Lead-Free, RoHS Compliant ID (Silicon Limited) 380A Automotive Qualified * S ID (Package Limited) 180A Description... See More ⇒
8.10. Size:634K international rectifier
irfp260mpbf.pdf
PD - 96293 IRFP260MPbF HEXFET Power MOSFET l Advanced Process Technology D l Dynamic dv/dt Rating VDSS = 200V l 175 C Operating Temperature l Fast Switching RDS(on) = 0.04 l Fully Avalanche Rated G l Ease of Paralleling ID = 50A l Simple Drive Requirements S l Lead-Free Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniq... See More ⇒
8.11. Size:1541K vishay
irfp264 sihfp264.pdf
IRFP264, SiHFP264 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 250 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.075 RoHS* Isolated Central Mounting Hole COMPLIANT Qg (Max.) (nC) 210 Fast Switching Qgs (nC) 35 Ease of Paralleling Qgd (nC) 98 Simple Drive Requirements Configuration Single Compl... See More ⇒
8.12. Size:128K vishay
irfp264npbf.pdf
IRFP264N, SiHFP264N Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Advanced Process Technology VDS (V) 250 Dynamic dV/dt Rating Available RDS(on) ( )VGS = 10 V 0.060 175 C Operating Temperature RoHS* Qg (Max.) (nC) 210 Fast Switching COMPLIANT Qgs (nC) 34 Fully Avalanche Rated Qgd (nC) 94 Ease of Paralleling Configuration Single Simple ... See More ⇒
8.13. Size:1762K vishay
irfp260 sihfp260.pdf
IRFP260, SiHFP260 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 200 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.055 RoHS* Isolated Central Mounting Hole Qg (Max.) (nC) 230 COMPLIANT Fast Switching Qgs (nC) 42 Ease of Paralleling Qgd (nC) 110 Simple Drive Requirements Configuration Single Comp... See More ⇒
8.14. Size:594K cn minos
irfp260n.pdf
Silicon N-Channel Power MOSFET Description IRFP260N the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. General Features V =200V, R ... See More ⇒
8.15. Size:399K inchange semiconductor
irfp264.pdf
iscN-Channel MOSFET Transistor IRFP264 FEATURES Low drain-source on-resistance RDS(ON) 75m @V =10V GS Enhancement mode Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER... See More ⇒
8.16. Size:247K inchange semiconductor
irfp260m.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFP260M IIRFP260M FEATURES Static drain-source on-resistance RDS(on) 40m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High Speed Power Switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Dr... See More ⇒
8.17. Size:212K inchange semiconductor
irfp260npbf.pdf
INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IRFP260NPBF FEATURES With TO-247 packaging Ease of paralleling High speed switching Hard switched and high frequency circuits 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMB... See More ⇒
8.18. Size:242K inchange semiconductor
irfp260n.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFP260N IIRFP260N FEATURES Static drain-source on-resistance RDS(on) 40m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching Fully Avalanche Rated ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VAL... See More ⇒
8.19. Size:399K inchange semiconductor
irfp260.pdf
iscN-Channel MOSFET Transistor IRFP260 FEATURES Low drain-source on-resistance RDS(ON) 55m @V =10V GS Enhancement mode Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER... See More ⇒
Detailed specifications: IRFP254N, IRFP254NPBF, IRFP254PBF, IRFP260MPBF, IRFP260NPBF, IRFP260PBF, IRFP264NPBF, IRFP264PBF, K3569, IRFP26N60LPBF, IRFP27N60K, IRFP27N60KPBF, IRFP2907PBF, IRFP2907ZPBF, IRFP3006, IRFP3077PBF, IRFP31N50L
Keywords - IRFP26N60L MOSFET specs
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