IRFP26N60LPBF Datasheet and Replacement

IRFP26N60L, SiHFP26N60LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Superfast Body Diode Eliminates the Need forVDS (V) 600AvailableExternal Diodes in ZVS ApplicationsRDS(on) ()VGS = 10 V 0.21RoHS* Lower Gate Charge Results in Simpler DriveQg (Max.) (nC) 180COMPLIANTRequirementsQgs (nC) 61 Enhanced dV/dt Capabilities Offer Improved Ruggedness

IRFP26N60L, SiHFP26N60LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Superfast Body Diode Eliminates the Need forVDS (V) 600AvailableExternal Diodes in ZVS ApplicationsRDS(on) ()VGS = 10 V 0.21RoHS* Lower Gate Charge Results in Simpler DriveQg (Max.) (nC) 180COMPLIANTRequirementsQgs (nC) 61 Enhanced dV/dt Capabilities Offer Improved Ruggedness

iscN-Channel MOSFET Transistor IRFP26N60LFEATURESLow drain-source on-resistance:RDS(ON) =0.25 (MAX)Enhancement mode:Vth = 3.0 to 5.0V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VAL

PD - 94900IRFP264PbF Lead-Free12/18/03Document Number: 91217 www.vishay.com1IRFP264PbFDocument Number: 91217 www.vishay.com2IRFP264PbFDocument Number: 91217 www.vishay.com3IRFP264PbFDocument Number: 91217 www.vishay.com4IRFP264PbFDocument Number: 91217 www.vishay.com5IRFP264PbFDocument Number: 91217 www.vishay.com6IRFP264PbFTO-247AC Package O

PD - 94811IRFP264NPbFHEXFET Power MOSFET Advanced Process TechnologyD Dynamic dv/dt Rating VDSS = 250V 175C Operating Temperature Fast SwitchingRDS(on) = 60m Fully Avalanche Rated G Ease of ParallelingID = 44A Simple Drive RequirementsS Lead-FreeDescriptionFifth Generation HEXFETs from International Rectifier utilize advanced processingtechniques to achi

PD - 94214IRFP264NHEXFET Power MOSFET Advanced Process TechnologyD Dynamic dv/dt Rating VDSS = 250V 175C Operating Temperature Fast SwitchingRDS(on) = 60m Fully Avalanche Rated G Ease of ParallelingID = 44A Simple Drive RequirementsSDescriptionFifth Generation HEXFETs from International Rectifier utilize advanced processingtechniques to achieve extremely l

PD - 94900IRFP264PbF Lead-Freewww.irf.com 112/18/03IRFP264PbF2 www.irf.comIRFP264PbFwww.irf.com 3IRFP264PbF4 www.irf.comIRFP264PbFwww.irf.com 5IRFP264PbF6 www.irf.comIRFP264PbFTO-247AC Package OutlineDimensions are shown in millimeters (inches)- D -3.65 (.143)5.30 (.209)15.90 (.626) 3.55 (.140)4.70 (.185)15.30 (.602)0.25 (.010) M D B M2

PD - 95010AIRFP260NPbFHEXFET Power MOSFETl Advanced Process TechnologyDl Dynamic dv/dt RatingVDSS = 200Vl 175C Operating Temperaturel Fast SwitchingRDS(on) = 0.04l Fully Avalanche RatedGl Ease of ParallelingID = 50Al Simple Drive RequirementsSl Lead-FreeDescriptionFifth Generation HEXFETs from International Rectifier utilizeadvanced processing techni

PD - 94004AIRFP260NHEXFET Power MOSFET Advanced Process TechnologyDVDSS = 200V Dynamic dv/dt Rating 175C Operating Temperature Fast SwitchingRDS(on) = 0.04G Fully Avalanche Rated Ease of ParallelingID = 50AS Simple Drive RequirementsDescriptionFifth Generation HEXFETs from International Rectifier utilize advanced processingtechniques to achieve extreme

PD- 95915IRFP260PbF Lead-Free9/27/04Document Number: 91215 www.vishay.com1IRFP260PbFDocument Number: 91215 www.vishay.com2IRFP260PbFDocument Number: 91215 www.vishay.com3IRFP260PbFDocument Number: 91215 www.vishay.com4IRFP260PbFDocument Number: 91215 www.vishay.com5IRFP260PbFDocument Number: 91215 www.vishay.com6IRFP260PbFPeak Diode Recovery

PD - 96420AUTOMOTIVE GRADEAUIRFP2602HEXFET Power MOSFETFeatures Advanced Process TechnologyDV(BR)DSS 24V Low On-Resistance 175C Operating Temperature RDS(on) typ. 1.25m Fast Switching max. 1.6m Repetitive Avalanche Allowed up to Tjmax G Lead-Free, RoHS CompliantID (Silicon Limited) 380A Automotive Qualified *SID (Package Limited) 180A Description

PD - 96293IRFP260MPbFHEXFET Power MOSFETl Advanced Process TechnologyDl Dynamic dv/dt RatingVDSS = 200Vl 175C Operating Temperaturel Fast SwitchingRDS(on) = 0.04l Fully Avalanche RatedGl Ease of ParallelingID = 50Al Simple Drive RequirementsSl Lead-FreeDescriptionFifth Generation HEXFETs from International Rectifier utilize advanced processingtechniq

IRFP264, SiHFP264Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 250Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.075RoHS* Isolated Central Mounting HoleCOMPLIANTQg (Max.) (nC) 210 Fast SwitchingQgs (nC) 35 Ease of ParallelingQgd (nC) 98 Simple Drive RequirementsConfiguration Single Compl

IRFP264N, SiHFP264NVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Advanced Process TechnologyVDS (V) 250 Dynamic dV/dt RatingAvailableRDS(on) ()VGS = 10 V 0.060 175 C Operating TemperatureRoHS*Qg (Max.) (nC) 210 Fast Switching COMPLIANTQgs (nC) 34 Fully Avalanche RatedQgd (nC) 94 Ease of ParallelingConfiguration Single Simple

IRFP260, SiHFP260Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 200Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.055RoHS* Isolated Central Mounting HoleQg (Max.) (nC) 230COMPLIANT Fast SwitchingQgs (nC) 42 Ease of ParallelingQgd (nC) 110 Simple Drive RequirementsConfiguration Single Comp

iscN-Channel MOSFET Transistor IRFP264FEATURESLow drain-source on-resistance:RDS(ON) 75m @V =10VGSEnhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFP260MIIRFP260MFEATURESStatic drain-source on-resistance:RDS(on)40mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh Speed Power SwitchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Dr

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IRFP260NPBFFEATURESWith TO-247 packagingEase of parallelingHigh speed switchingHard switched and high frequency circuits100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMB

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFP260NIIRFP260NFEATURESStatic drain-source on-resistance:RDS(on)40mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingFully Avalanche RatedABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VAL

iscN-Channel MOSFET Transistor IRFP260FEATURESLow drain-source on-resistance:RDS(ON) 55m @V =10VGSEnhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER