All MOSFET. IRFP27N60KPBF Datasheet

 

IRFP27N60KPBF MOSFET. Datasheet pdf. Equivalent


   Type Designator: IRFP27N60KPBF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 500 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 27 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 180 nC
   trⓘ - Rise Time: 110 nS
   Cossⓘ - Output Capacitance: 460 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.22 Ohm
   Package: TO247AC

 IRFP27N60KPBF Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRFP27N60KPBF Datasheet (PDF)

 ..1. Size:615K  international rectifier
 irfp27n60kpbf.pdf

IRFP27N60KPBF IRFP27N60KPBF

PD - 95479ASMPS MOSFETIRFP27N60KPbFHEXFET Power MOSFETApplicationsl Hard Switching Primary or PFC SwitchVDSS RDS(on) typ. IDl Switch Mode Power Supply (SMPS)l Uninterruptible Power Supply600V 180m 27Al High Speed Power Switchingl Motor Drivel Lead-FreeBenefitsl Low Gate Charge Qg results in SimpleDrive Requirementl Improved Gate, Avalanche and Dynamicdv/dt

 ..2. Size:183K  vishay
 irfp27n60k irfp27n60kpbf sihfp27n60k.pdf

IRFP27N60KPBF IRFP27N60KPBF

IRFP27N60K, SiHFP27N60KVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 600AvailableRequirementRDS(on) ()VGS = 10 V 0.18RoHS* Improved Gate, Avalanche and Dynamic dV/dtQg (Max.) (nC) 180COMPLIANTRuggednessQgs (nC) 56 Fully Characterized Capacitance and Avalanche VoltageQgd (nC) 86and CurrentCo

 4.1. Size:91K  international rectifier
 irfp27n60k.pdf

IRFP27N60KPBF IRFP27N60KPBF

PD - 94407SMPS MOSFETIRFP27N60KHEXFET Power MOSFETApplications Hard Switching Primary or PFC SwitchVDSS RDS(on) typ. ID Switch Mode Power Supply (SMPS) Uninterruptible Power Supply600V 180m 27A High Speed Power Switching Motor DriveBenefits Low Gate Charge Qg results in SimpleDrive Requirement Improved Gate, Avalanche and Dynamicdv/dt Ruggedness Fully Char

 4.2. Size:179K  vishay
 irfp27n60k sihfp27n60k.pdf

IRFP27N60KPBF IRFP27N60KPBF

IRFP27N60K, SiHFP27N60KVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 600AvailableRequirementRDS(on) ()VGS = 10 V 0.18RoHS* Improved Gate, Avalanche and Dynamic dV/dtQg (Max.) (nC) 180COMPLIANTRuggednessQgs (nC) 56 Fully Characterized Capacitance and Avalanche VoltageQgd (nC) 86and CurrentCo

 4.3. Size:401K  inchange semiconductor
 irfp27n60k.pdf

IRFP27N60KPBF IRFP27N60KPBF

iscN-Channel MOSFET Transistor IRFP27N60KFEATURESLow drain-source on-resistance:RDS(ON) =0.22 (MAX)Enhancement mode:Vth = 3.0 to 5.0V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VAL

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: IXFX32N50Q

 

 
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