IRFP2907PBF
MOSFET. Datasheet pdf. Equivalent
Type Designator: IRFP2907PBF
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 470
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 75
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 209
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 410
nC
trⓘ - Rise Time: 190
nS
Cossⓘ -
Output Capacitance: 2100
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0045
Ohm
Package:
TO247AC
IRFP2907PBF
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRFP2907PBF
Datasheet (PDF)
..1. Size:218K international rectifier
irfp2907pbf.pdf 
PD -95050CIRFP2907PbFHEXFET Power MOSFETTypical ApplicationsD Telecom applications requiring soft startVDSS = 75VBenefitsRDS(on) = 4.5m Advanced Process TechnologyG Ultra Low On-Resistance Dynamic dv/dt RatingID = 209AS 175C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-FreeDescriptionThis Stripe Planar design
..2. Size:218K infineon
irfp2907pbf.pdf
PD -95050CIRFP2907PbFHEXFET Power MOSFETTypical ApplicationsD Telecom applications requiring soft startVDSS = 75VBenefitsRDS(on) = 4.5m Advanced Process TechnologyG Ultra Low On-Resistance Dynamic dv/dt RatingID = 209AS 175C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-FreeDescriptionThis Stripe Planar design
6.1. Size:286K international rectifier
auirfp2907z.pdf
PD - 97550AUIRFP2907ZAUTOMOTIVE GRADEHEXFET Power MOSFETDFeaturesV(BR)DSS75V Advanced Process Technology Ultra Low On-ResistanceRDS(on) max.4.5mG 175C Operating Temperature Fast SwitchingID170AS Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified *DDescriptionSpecifically designed for
6.2. Size:115K international rectifier
irfp2907.pdf
PD -93906AIRFP2907AUTOMOTIVE MOSFETHEXFET Power MOSFETTypical ApplicationsD Integrated Starter AlternatorVDSS = 75V 42 Volts Automotive Electrical SystemsBenefits RDS(on) = 4.5m Advanced Process Technology G Ultra Low On-ResistanceID = 209AV Dynamic dv/dt RatingS 175C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to TjmaxDescript
6.3. Size:221K international rectifier
auirfp2907.pdf
PD -97692AAUTOMOTIVE GRADEAUIRFP2907HEXFET Power MOSFETFeaturesl Advanced Planar TechnologyDV(BR)DSS75Vl Low On-ResistanceRDS(on) typ.3.6ml Dynamic dV/dT Ratingl 175C Operating Temperaturemax 4.5mGl Fast SwitchingID (Silicon Limited)209Al Fully Avalanche RatedSID (Package Limited)90Al Repetitive Avalanche Allowedup to Tjmaxl Lead-Free, R
6.4. Size:276K international rectifier
irfp2907zpbf.pdf
PD - 95480BIRFP2907ZPbFFeaturesHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-ResistanceDl 175C Operating Temperature VDSS = 75Vl Fast Switchingl Repetitive Avalanche Allowed up to TjmaxRDS(on) = 4.5mGl Lead-FreeID = 90ASDescriptionThis HEXFET Power MOSFET utilizes the latestprocessing techniques to achieve extremely lowon-resistan
6.5. Size:276K infineon
irfp2907zpbf.pdf
PD - 95480BIRFP2907ZPbFFeaturesHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-ResistanceDl 175C Operating Temperature VDSS = 75Vl Fast Switchingl Repetitive Avalanche Allowed up to TjmaxRDS(on) = 4.5mGl Lead-FreeID = 90ASDescriptionThis HEXFET Power MOSFET utilizes the latestprocessing techniques to achieve extremely lowon-resistan
6.6. Size:242K inchange semiconductor
irfp2907z.pdf
isc N-Channel MOSFET Transistor IRFP2907ZIIRFP2907ZFEATURESStatic drain-source on-resistance:RDS(on)4.5mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONUltra Low On-resistanceFast SwitchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-
6.7. Size:241K inchange semiconductor
irfp2907.pdf
isc N-Channel MOSFET Transistor IRFP2907IIRFP2907FEATURESStatic drain-source on-resistance:RDS(on)4.5mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONUltra Low On-resistanceFast SwitchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Sour
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