IXTY1R4N120P Specs and Replacement

Type Designator: IXTY1R4N120P

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 86 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 1.4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 27 nS

Cossⓘ - Output Capacitance: 36 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 13 Ohm

Package: TO-252

IXTY1R4N120P substitution

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IXTY1R4N120P datasheet

 ..1. Size:123K  ixys
 ixty1r4n120p.pdf pdf_icon

IXTY1R4N120P

PolarTM VDSS = 1200V IXTY1R4N120P Power MOSFETs ID25 = 1.4A IXTA1R4N120P RDS(on) 13 IXTP1R4N120P TO-252 (IXTY) N-Channel Enhancement Mode Avalanche Rated G Fast Intrinsic Rectifier S D (Tab) TO-263 AA (IXTA) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 1200 V G VDGR TJ = 25 C to 150 C, RGS = 1M 1200 V S VGSS Contin... See More ⇒

 8.1. Size:91K  ixys
 ixtp1r6n50p ixty1r6n50p.pdf pdf_icon

IXTY1R4N120P

IXTP 1R6N50P VDSS = 500 V PolarHVTM IXTY 1R6N50P ID25 = 1.6 A Power MOSFET RDS(on) 6.5 N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-220 (IXTP) VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C; RGS = 1 M 500 V VGS Continuous 30 V G (TAB) D VGSM Transient 40 V S ID25 TC = 25 C 1.6 A IDM... See More ⇒

 8.2. Size:179K  ixys
 ixty1r6n50d2 ixta1r6n50d2 ixtp1r6n50d2.pdf pdf_icon

IXTY1R4N120P

Preliminary Technical Information Depletion Mode VDSX = 500V IXTY1R6N50D2 MOSFET ID(on) > 1.6A IXTA1R6N50D2 RDS(on) 2.3 IXTP1R6N50D2 N-Channel TO-252 (IXTY) G S D (Tab) Symbol Test Conditions Maximum Ratings TO-263 AA (IXTA) VDSX TJ = 25 C to 150 C 500 V VGSX Continuous 20 V VGSM Transient 30 V G S PD TC = 25 C 100 W D (Tab) TJ -... See More ⇒

 9.1. Size:60K  ixys
 ixta1n80 ixtp1n80 ixty1n80.pdf pdf_icon

IXTY1R4N120P

IXTA 1N80 VDSS = 800 V High Voltage MOSFET IXTP 1N80 ID25 = 750 mA IXTY 1N80 N-Channel Enhancement Mode RDS(on) = 11 Avalanche Energy Rated Preliminary Data Symbol Test Conditions Maximum Ratings TO-220AB (IXTP) VDSS TJ = 25 C to 150 C 800 V VDGR TJ = 25 C to 150 C; RGS = 1 M 800 V D (TAB) VGS Continuous 20 V G D S VGSM Transient 30 V ID25 T... See More ⇒

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Detailed specifications: IXZ210N50L, IXUN350N10, IXUC200N055, IXUC100N055, IXTY90N055T2, IXTY8N65X2, IXTY4N65X2, IXTY2N65X2, STF13NM60N, IXTY1N120P, IXTX210P10T, IXTX20N150, IXTX120P20T, IXTX120N65X2, IXTX102N65X2, IXTV230N085TS, IXTT6N150

Keywords - IXTY1R4N120P MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.