IXTY1R4N120P MOSFET. Datasheet pdf. Equivalent

   Type Designator: IXTY1R4N120P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 86 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id|ⓘ - Maximum Drain Current: 1.4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 27 nS
   Cossⓘ - Output Capacitance: 36 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 13 Ohm
   Package: TO-252

IXTY1R4N120P Transistor Equivalent Substitute - MOSFET Cross-Reference Search

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