All MOSFET. IXTY1N120P Datasheet

 

IXTY1N120P Datasheet and Replacement


   Type Designator: IXTY1N120P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 63 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 28 nS
   Cossⓘ - Output Capacitance: 25 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 20 Ohm
   Package: TO-252
 

 IXTY1N120P substitution

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IXTY1N120P Datasheet (PDF)

 ..1. Size:123K  ixys
ixty1n120p.pdf pdf_icon

IXTY1N120P

PolarTM VDSS = 1200VIXTY1N120PPower MOSFETs ID25 = 1AIXTA1N120P RDS(on) 20 IXTP1N120PTO-252 (IXTY)N-Channel Enhancement ModeAvalanche RatedGFast Intrinsic RectifierSD (Tab)TO-263 AA (IXTA)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 1200 VGVDGR TJ = 25C to 150C, RGS = 1M 1200 VSVGSS Continuous 2

 8.1. Size:60K  ixys
ixta1n80 ixtp1n80 ixty1n80.pdf pdf_icon

IXTY1N120P

IXTA 1N80VDSS = 800 VHigh Voltage MOSFETIXTP 1N80ID25 = 750 mAIXTY 1N80N-Channel Enhancement ModeRDS(on) = 11 Avalanche Energy RatedPreliminary DataSymbol Test Conditions Maximum Ratings TO-220AB (IXTP)VDSS TJ = 25C to 150C 800 VVDGR TJ = 25C to 150C; RGS = 1 M 800 VD (TAB)VGS Continuous 20 VGDSVGSM Transient 30 VID25 T

 8.2. Size:161K  ixys
ixta1n80p ixtp1n80p ixtu1n80p ixty1n80p.pdf pdf_icon

IXTY1N120P

Preliminary Technical InformationVDSS = 800VIXTA1N80PPolarTM PowerID25 = 1AIXTP1N80PMOSFET RDS(on) 14 IXTU1N80PIXTY1N80PN-Channel Enhancement ModeAvalanche RatedTO-263 (IXTA) TO-220 (IXTP) TO-251 (IXTU)GG(TAB)(TAB)(TAB)S G DDSSSymbol Test Conditions Maximum RatingsTO-252 (IXTY)VDSS TJ = 25C to 150C 800 VVD

 9.1. Size:91K  ixys
ixtp1r6n50p ixty1r6n50p.pdf pdf_icon

IXTY1N120P

IXTP 1R6N50P VDSS = 500 VPolarHVTMIXTY 1R6N50P ID25 = 1.6 APower MOSFET RDS(on) 6.5 N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum Ratings TO-220 (IXTP)VDSS TJ = 25C to 150C 500 VVDGR TJ = 25C to 150C; RGS = 1 M 500 VVGS Continuous 30 VG(TAB)DVGSM Transient 40 VSID25 TC = 25C 1.6 AIDM

Datasheet: IXUN350N10 , IXUC200N055 , IXUC100N055 , IXTY90N055T2 , IXTY8N65X2 , IXTY4N65X2 , IXTY2N65X2 , IXTY1R4N120P , AON6380 , IXTX210P10T , IXTX20N150 , IXTX120P20T , IXTX120N65X2 , IXTX102N65X2 , IXTV230N085TS , IXTT6N150 , IXTT4N150HV .

History: NCE60H15T

Keywords - IXTY1N120P MOSFET datasheet

 IXTY1N120P cross reference
 IXTY1N120P equivalent finder
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