IXTX20N150 MOSFET. Datasheet pdf. Equivalent
Type Designator: IXTX20N150
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 1250 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
|Id|ⓘ - Maximum Drain Current: 20 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 215 nC
trⓘ - Rise Time: 30 nS
Cossⓘ - Output Capacitance: 487 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
Package: PLUS247
IXTX20N150 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IXTX20N150 Datasheet (PDF)
ixtk20n150 ixtx20n150.pdf
High Voltage PowerVDSS = 1500VIXTK20N150MOSFETs w/ ExtendedID25 = 20AIXTX20N150FBSOARDS(on)
ixtx200n10l2.pdf
isc N-Channel MOSFET Transistor IXTX200N10L2FEATURESWith TO-247 packagingWith low gate drive requirementsEasy to drive100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 100 VDSSV
ixtk210p10t ixtx210p10t.pdf
Advance Technical InformationTrenchPTM VDSS = - 100VIXTK210P10TPower MOSFETs ID25 = - 210AIXTX210P10T RDS(on) 7.5m trr 200nsP-Channel Enhancement ModeAvalanche RatedFast Intrinsic RectifierTO-264 (IXTK)Symbol Test Conditions Maximum RatingsGVDSS TJ = 25C to 150C -100 V DSVDGR TJ = 25C to 150C, RGS
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
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