All MOSFET. IXTX120P20T Datasheet

 

IXTX120P20T Datasheet and Replacement


   Type Designator: IXTX120P20T
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1040 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V
   |Id| ⓘ - Maximum Drain Current: 120 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 85 nS
   Cossⓘ - Output Capacitance: 2550 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
   Package: PLUS247
 

 IXTX120P20T substitution

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IXTX120P20T Datasheet (PDF)

 ..1. Size:178K  ixys
 ixtk120p20t ixtx120p20t.pdf pdf_icon

IXTX120P20T

Advance Technical InformationTrenchPTM VDSS = - 200VIXTK120P20TPower MOSFETs ID25 = - 120AIXTX120P20T RDS(on) 30m trr 300nsP-Channel Enhancement ModeAvalanche RatedFast Intrinsic RectifierTO-264 (IXTK)Symbol Test Conditions Maximum RatingsGVDSS TJ = 25C to 150C - 200 V DSVDGR TJ = 25C to 150C, RGS

 7.1. Size:159K  ixys
 ixtk120n65x2 ixtx120n65x2.pdf pdf_icon

IXTX120P20T

Advance Technical InformationX2-Class VDSS = 650VIXTK120N65X2Power MOSFET ID25 = 120AIXTX120N65X2 RDS(on) 24m N-Channel Enhancement ModeAvalanche RatedTO-264P (IXTK)Symbol Test Conditions Maximum RatingsGVDSS TJ = 25C to 150C 650 VDTabVDGR TJ = 25C to 150C, RGS = 1M 650 V SVGSS Continuous 30 VPLUS247 (IX

 9.1. Size:177K  ixys
 ixtk170p10p ixtx170p10p.pdf pdf_icon

IXTX120P20T

PolarPTM VDSS = -100V IXTK170P10PID25 = -170APower MOSFET IXTX170P10P RDS(on) 12m P-Channel Enhancement ModeAvalanche RatedTO-264 (IXTK)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C -100 VVDGR TJ = 25C to 150C, RGS = 1M -100 V GD (TAB)SVGSS Continuous 20 VVGSM Transient 30 VID25 TC = 25C -1

 9.2. Size:88K  ixys
 ixtk17n120l ixtx17n120l.pdf pdf_icon

IXTX120P20T

Advance Technical InformationIXTK17N120L VDSS = 1200 VLinear Power MOSFETIXTX17N120L ID25 = 17 AWith Extended FBSOA RDS(on) 0.99 N-Channel Enhancement ModeTO-264 (IXTK)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 1200 VVDGR TJ = 25C to 150C; RGS = 1 M 1200 VGDVGS Continuous 30 VS(TAB)VGSM Transient

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Datasheet: IXTY90N055T2 , IXTY8N65X2 , IXTY4N65X2 , IXTY2N65X2 , IXTY1R4N120P , IXTY1N120P , IXTX210P10T , IXTX20N150 , P60NF06 , IXTX120N65X2 , IXTX102N65X2 , IXTV230N085TS , IXTT6N150 , IXTT4N150HV , IXTT3N200P3HV , IXTT2N300P3HV , IXTT2N170D2 .

History: STB5NK52ZD-1

Keywords - IXTX120P20T MOSFET datasheet

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