IXTX120P20T MOSFET Datasheet: P-Ch, 200V, 120A. Full specification with pinout and replacement list

IXTX120P20T Specs and Replacement

Type Designator: IXTX120P20T

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1040 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V

|Id| ⓘ - Maximum Drain Current: 120 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 85 nS

Cossⓘ - Output Capacitance: 2550 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm

Package: PLUS247

IXTX120P20T substitution

- MOSFET ⓘ Cross-Reference Search

IXTX120P20T datasheet

..1. Size:178K ixys
ixtk120p20t ixtx120p20t.pdf pdf_icon

Advance Technical Information TrenchPTM VDSS = - 200V IXTK120P20T Power MOSFETs ID25 = - 120A IXTX120P20T RDS(on) 30m trr 300ns P-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-264 (IXTK) Symbol Test Conditions Maximum Ratings G VDSS TJ = 25 C to 150 C - 200 V D S VDGR TJ = 25 C to 150 C, RGS ... See More ⇒

7.1. Size:159K ixys
ixtk120n65x2 ixtx120n65x2.pdf pdf_icon

Advance Technical Information X2-Class VDSS = 650V IXTK120N65X2 Power MOSFET ID25 = 120A IXTX120N65X2 RDS(on) 24m N-Channel Enhancement Mode Avalanche Rated TO-264P (IXTK) Symbol Test Conditions Maximum Ratings G VDSS TJ = 25 C to 150 C 650 V D Tab VDGR TJ = 25 C to 150 C, RGS = 1M 650 V S VGSS Continuous 30 V PLUS247 (IX... See More ⇒

9.1. Size:177K ixys
ixtk170p10p ixtx170p10p.pdf pdf_icon

PolarPTM VDSS = -100V IXTK170P10P ID25 = -170A Power MOSFET IXTX170P10P RDS(on) 12m P-Channel Enhancement Mode Avalanche Rated TO-264 (IXTK) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C -100 V VDGR TJ = 25 C to 150 C, RGS = 1M -100 V G D (TAB) S VGSS Continuous 20 V VGSM Transient 30 V ID25 TC = 25 C -1... See More ⇒

9.2. Size:88K ixys
ixtk17n120l ixtx17n120l.pdf pdf_icon