All MOSFET. IXTT2N300P3HV Datasheet

 

IXTT2N300P3HV Datasheet and Replacement


   Type Designator: IXTT2N300P3HV
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 520 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 3000 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 17 nS
   Cossⓘ - Output Capacitance: 90 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 21 Ohm
   Package: TO-268HV
 

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IXTT2N300P3HV Datasheet (PDF)

 ..1. Size:202K  ixys
 ixth2n300p3hv ixtt2n300p3hv.pdf pdf_icon

IXTT2N300P3HV

Advance Technical InformationHigh Voltage VDSS = 3000VIXTT2N300P3HVPower MOSFETID25 = 2AIXTH2N300P3HV RDS(on) 21 TO-268HV (IXTT)N-Channel Enhancement ModeGS D (Tab)TO-247HV (IXTH)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 3000 VVDGR TJ = 25C to 150C, RGS = 1M 3000 VVGSS Continuous 20 VV

 8.1. Size:172K  ixys
 ixth2n170d2 ixtt2n170d2.pdf pdf_icon

IXTT2N300P3HV

Depletion Mode VDSX = 1700VIXTT2N170D2MOSFETs ID(on) > 2AIXTH2N170D2 RDS(on) 6.5 N-ChannelTO-268 (IXTT)GSD (Tab)TO-247 (IXTH)Symbol Test Conditions Maximum RatingsVDSX TJ = 25C to 150C 1700 VVDGX TJ = 25C to 150C, RGS = 1M 1700 VVGSX Continuous 20 VGVGSM Transient 30 VDD (Tab)SPD TC = 25C 568 WG = Gate

 9.1. Size:230K  ixys
 ixtt26n60p ixtv26n60p ixtv26n60ps ixth26n60p ixtq26n60p.pdf pdf_icon

IXTT2N300P3HV

IXTH26N60P VDSS = 600 VPolarHVTMIXTQ26N60P ID25 = 26 APower MOSFET IXTT26N60P RDS(on) 270 m N-Channel Enhancement ModeIXTV26N60PAvalanche RatedTO-247 (IXTH)IXTV26N60PSGDSSymbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 600 V TO-3P (IXTQ)VDGR TJ = 25C to 150C; RGS = 1 M 600 VVGSS Continuous 30 VVGSM Tran

 9.2. Size:337K  ixys
 ixtt240n15x4hv ixth240n15x4.pdf pdf_icon

IXTT2N300P3HV

Advance Technical InformationX4-Class VDSS = 150VIXTT240N15X4HVPower MOSFETTM ID25 = 240AIXTH240N15X4 RDS(on) 4.4m N-Channel Enhancement ModeAvalanche RatedTO-268HV (IXTT..HV)GSymbol Test Conditions Maximum RatingsSVDSS TJ = 25C to 175C 150 V D (Tab)VDGR TJ = 25C to 175C, RGS = 1M 150 VTO-247 (IXTH)VGSS Cont

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Datasheet: IXTX20N150 , IXTX120P20T , IXTX120N65X2 , IXTX102N65X2 , IXTV230N085TS , IXTT6N150 , IXTT4N150HV , IXTT3N200P3HV , RU7088R , IXTT2N170D2 , IXTT1N450HV , IXTT1N300P3HV , IXTT1N250HV , IXTT140P10T , IXTT12N150HV , IXTT12N150 , IXTT02N450HV .

History: IPB70N10S3-12 | PE506BA | FK330309 | CTD03N005 | AON6758 | LSD80R350GT | DMN4009LK3

Keywords - IXTT2N300P3HV MOSFET datasheet

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