IXTT12N150HV Specs and Replacement

Type Designator: IXTT12N150HV

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 890 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 1500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 12 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 16 nS

Cossⓘ - Output Capacitance: 240 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.2 Ohm

Package: TO-268HV

IXTT12N150HV substitution

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IXTT12N150HV datasheet

 ..1. Size:142K  ixys
 ixtt12n150hv.pdf pdf_icon

IXTT12N150HV

High Voltage VDSS = 1500V IXTT12N150HV ID25 = 12A Power MOSFET RDS(on) 2.2 N-Channel Enhancement Mode Fast Intrinsic Diode TO-268HV G Symbol Test Conditions Maximum Ratings S VDSS TJ = 25 C to 150 C 1500 V D (Tab) VDGR TJ = 25 C to 150 C, RGS = 1M 1500 V G = Gate D = Drain VGSS Continuous 30 V ... See More ⇒

 4.1. Size:175K  ixys
 ixtt12n150 ixth12n150.pdf pdf_icon

IXTT12N150HV

High Voltage VDSS = 1500V IXTT12N150 ID25 = 12A Power MOSFET IXTH12N150 RDS(on) 2.2 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-268 (IXTT) G Symbol Test Conditions Maximum Ratings S VDSS TJ = 25 C to 150 C 1500 V D (Tab) VDGR TJ = 25 C to 150 C, RGS = 1M 1500 V VGSS Continuous 30 V TO-247 (IXTH) VG... See More ⇒

 4.2. Size:122K  ixys
 ixth12n150 ixtt12n150.pdf pdf_icon

IXTT12N150HV

High Voltage VDSS = 1500V IXTT12N150 ID25 = 12A Power MOSFETs IXTH12N150 RDS(on) 2 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-268 (IXTT) G Symbol Test Conditions Maximum Ratings S VDSS TJ = 25 C to 150 C 1500 V D (Tab) VDGR TJ = 25 C to 150 C, RGS = 1M 1500 V VGSS Continuous 30 V TO-247 (IXTH) VGSM Transient... See More ⇒

 8.1. Size:171K  ixys
 ixtq120n15p ixtt120n15p.pdf pdf_icon

IXTT12N150HV

IXTQ 120N15P VDSS = 150 V PolarHTTM IXTT 120N15P ID25 = 120 A Power MOSFET RDS(on) 16 m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-3P (IXTQ) VDSS TJ = 25 C to 175 C 150 V VDGR TJ = 25 C to 175 C; RGS = 1 M 150 V VDSS Continuous 20 V VGSM Transient 30 V ID25 TC = 25 C 120 A G D... See More ⇒

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Detailed specifications: IXTT4N150HV, IXTT3N200P3HV, IXTT2N300P3HV, IXTT2N170D2, IXTT1N450HV, IXTT1N300P3HV, IXTT1N250HV, IXTT140P10T, AON7403, IXTT12N150, IXTT02N450HV, IXTR68P20T, IXTR210P10T, IXTR140P10T, IXTR120P20T, IXTR102N65X2, IXTQ80N28T

Keywords - IXTT12N150HV MOSFET specs

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