All MOSFET. IRFP233 Datasheet

 

IRFP233 MOSFET. Datasheet pdf. Equivalent

Type Designator: IRFP233

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 75 W

Maximum Drain-Source Voltage |Vds|: 150 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 8 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 19 nC

Rise Time (tr): 50(max) nS

Drain-Source Capacitance (Cd): 120 pF

Maximum Drain-Source On-State Resistance (Rds): 0.6 Ohm

Package: TO3P

IRFP233 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRFP233 Datasheet (PDF)

8.1. irfp23n50l.pdf Size:104K _international_rectifier

IRFP233
IRFP233

PD - 94230SMPS MOSFETIRFP23N50LHEXFET Power MOSFETApplicationsVDSS RDS(on) typ. Trr typ. ID Switch Mode Power Supply (SMPS)500V 0.190 170ns 23A UninterruptIble Power Supply High Speed Power Switching Motor DriveBenefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and Dynamicdv/dt Ruggedness Fully Characterized Capacitance and

8.2. irfp230-233 irf630-633.pdf Size:186K _samsung

IRFP233
IRFP233

 8.3. irfp23n50l sihfp23n50l.pdf Size:188K _vishay

IRFP233
IRFP233

IRFP23N50L, SiHFP23N50LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Superfast Body Diode Eliminates the Need forVDS (V) 500External Diodes in ZVS ApplicationsAvailableRDS(on) ()VGS = 10 V 0.190 Lower Gate Charge Results in Simpler DriveRoHS*Qg (Max.) (nC) 150COMPLIANTRequirementsQgs (nC) 44 Enhanced dV/dt Capabilities Offer Improved Ruggedness

8.4. irfp23n50l irfp23n50lpbf sihfp23n50l.pdf Size:192K _vishay

IRFP233
IRFP233

IRFP23N50L, SiHFP23N50LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Superfast Body Diode Eliminates the Need forVDS (V) 500External Diodes in ZVS ApplicationsAvailableRDS(on) ()VGS = 10 V 0.190 Lower Gate Charge Results in Simpler DriveRoHS*Qg (Max.) (nC) 150COMPLIANTRequirementsQgs (nC) 44 Enhanced dV/dt Capabilities Offer Improved Ruggedness

 8.5. irfp23n50l.pdf Size:400K _inchange_semiconductor

IRFP233
IRFP233

iscN-Channel MOSFET Transistor IRFP23N50LFEATURESLow drain-source on-resistance:RDS(ON) =0.235 (MAX)Enhancement mode:Vth = 3.0 to 5.0V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VA

Datasheet: IRFP150N , IRFP151 , IRFP152 , IRFP153 , IRFP22N50A , IRFP230 , IRFP231 , IRFP232 , APT50M38JFLL , APT50M38JLL , IRFP240 , IRFP240A , IRFP240FI , IRFP241 , IRFP242 , IRFP243 , IRFP244 .

 

 
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