IXTR120P20T Spec and Replacement
Type Designator: IXTR120P20T
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 595 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
|Id| ⓘ - Maximum Drain Current: 90 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 740 nC
tr ⓘ - Rise Time: 85 nS
Cossⓘ - Output Capacitance: 2550 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.032 Ohm
Package: TO-247 ISOPLUS-247
IXTR120P20T Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IXTR120P20T Specs
ixtr120p20t.pdf
Advance Technical Information TrenchPTM VDSS = - 200V IXTR120P20T Power MOSFETs ID25 = - 90A RDS(on) 32m trr 300ns P-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier ISOPLUS247 E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C - 200 V VDGR TJ = 25 C to 150 C, RGS = 1M - 200 V ... See More ⇒
ixtr102n65x2.pdf
Advance Technical Information X2-Class VDSS = 650V IXTR102N65X2 Power MOSFET ID25 = 54A RDS(on) 33m (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated ISOPLUS247 E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 650 V VDGR TJ = 25 C to 150 C, RGS = 1M 650 V VGSS Continuous 30 V G VG... See More ⇒
ixtr140p10t.pdf
Preliminary Technical Information TrenchPTM VDSS = -100V IXTR140P10T Power MOSFET ID25 = - 90A RDS(on) 13m P-Channel Enhancement Mode Avalanche Rated ISOPLUS247 E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C -100 V G VDGR TJ = 25 C to 150 C, RGS = 1M -100 V Isolated Tab D S VGSS Continuous 15 V VGSM Transient... See More ⇒
Detailed specifications: IXTT1N250HV , IXTT140P10T , IXTT12N150HV , IXTT12N150 , IXTT02N450HV , IXTR68P20T , IXTR210P10T , IXTR140P10T , AO4407A , IXTR102N65X2 , IXTQ80N28T , IXTQ32N65X , IXTQ180N055T , IXTQ130N20T , IXTP8N65X2M , IXTP8N65X2 , IXTP80N075L2 .
Keywords - IXTR120P20T MOSFET specs
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IXTR120P20T replacement
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