IXTP8N65X2 Specs and Replacement

Type Designator: IXTP8N65X2

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 150 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 28 nS

Cossⓘ - Output Capacitance: 495 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.5 Ohm

Package: TO-220

IXTP8N65X2 substitution

- MOSFET ⓘ Cross-Reference Search

 

IXTP8N65X2 datasheet

 ..1. Size:238K  ixys
ixta8n65x2 ixtp8n65x2 ixty8n65x2.pdf pdf_icon

IXTP8N65X2

Preliminary Technical Information X2-Class VDSS = 650V IXTY8N65X2 Power MOSFET ID25 = 8A IXTA8N65X2 RDS(on) 500m IXTP8N65X2 N-Channel Enhancement Mode TO-252 (IXTY) G S Symbol Test Conditions Maximum Ratings D (Tab) VDSS TJ = 25 C to 150 C 650 V TO-263 (IXTA) VDGR TJ = 25 C to 150 C, RGS = 1M 650 V VGSS Continuous 30 V G... See More ⇒

 0.1. Size:116K  ixys
ixtp8n65x2m.pdf pdf_icon

IXTP8N65X2

Advance Technical Information X2-Class VDSS = 650V IXTP8N65X2M Power MOSFET ID25 = 4A RDS(on) 550m (Electrically Isolated Tab) N-Channel Enhancement Mode OVERMOLDED Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 650 V VDGR TJ = 25 C to 150 C, RGS = 1M 650 V G D S VGSS Continuous 30 V VGSM Transient 40 V ... See More ⇒

 8.1. Size:106K  ixys
ixtp8n50pm.pdf pdf_icon

IXTP8N65X2

Preliminary Technical Information IXTP 8N50PM VDSS = 500 V PolarHVTM ID25 = 4 A Power MOSFET RDS(on) 0.8 (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings OVERMOLDED TO-220 (IXTP...M) OUTLINE VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C; RGS = 1 M 500 V VGS ... See More ⇒

 8.2. Size:229K  ixys
ixta8n50p ixtp8n50p.pdf pdf_icon

IXTP8N65X2

IXTA 8N50P VDSS = 500 V PolarHVTM IXTP 8N50P ID25 = 8 A Power MOSFET RDS(on) 0.8 N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (IXTA) VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C; RGS = 1 M 500 V G VGS Continuous 30 V S VGSM Transient 40 V (TAB) ID25 TC = 25 C8 A IDM... See More ⇒

Detailed specifications: IXTR140P10T, IXTR120P20T, IXTR102N65X2, IXTQ80N28T, IXTQ32N65X, IXTQ180N055T, IXTQ130N20T, IXTP8N65X2M, IRF740, IXTP80N075L2, IXTP7N50A, IXTP7N50, IXTP7N45A, IXTP7N45, IXTP6N60A, IXTP6N60, IXTP64N10L2

Keywords - IXTP8N65X2 MOSFET specs

 IXTP8N65X2 cross reference

 IXTP8N65X2 equivalent finder

 IXTP8N65X2 pdf lookup

 IXTP8N65X2 substitution

 IXTP8N65X2 replacement

Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility