All MOSFET. IXTP7N45A Datasheet

 

IXTP7N45A MOSFET. Datasheet pdf. Equivalent


   Type Designator: IXTP7N45A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 450 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 7 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 155 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.85 Ohm
   Package: TO220

 IXTP7N45A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IXTP7N45A Datasheet (PDF)

 ..1. Size:64K  ixys
 ixtm7n45 ixtm7n45a ixtm7n50 ixtm7n50a ixtp7n45 ixtp7n45a ixtp7n50 ixtp7n50a.pdf

IXTP7N45A

 8.1. Size:182K  ixys
 ixta7n60p ixtp7n60p.pdf

IXTP7N45A IXTP7N45A

VDSS = 600 VIXTA 7N60PPolarHVTMID25 = 7 AIXTP 7N60PPower MOSFET RDS(on) 1.1 N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-220 (IXTP)VDSS TJ = 25 C to 175 C 600 VVDGR TJ = 25 C to 175 C; RGS = 1 M 600 VVGS Continuous 30 V(TAB)GVGSM Transient 40 VDSID25 TC = 25 C7 A

 9.1. Size:252K  ixys
 ixta75n10p ixtp75n10p ixtq75n10p.pdf

IXTP7N45A IXTP7N45A

IXTA 75N10P VDSS = 100 VPolarHTTMIXTP 75N10P ID25 = 75 APower MOSFETIXTQ 75N10P RDS(on) 25 m N-Channel Enhancement ModeAvalanche RatedTO-263 (IXTA)Symbol Test Conditions Maximum RatingsGSVDSS TJ = 25 C to 175 C 100 V(TAB)VDGR TJ = 25 C to 175 C; RGS = 1 M 100 VVGS Continuous 20 VTO-220 (IXTP)VGSM Transient

 9.2. Size:177K  ixys
 ixta76n075t ixtp76n075t.pdf

IXTP7N45A IXTP7N45A

Preliminary Technical InformationIXTA76N075T VDSS = 75 VTrenchMVTMIXTP76N075T ID25 = 76 APower MOSFET RDS(on) 12 m N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-263 (IXTA)VDSS TJ = 25C to 175C75 VVDGR TJ = 25C to 175C; RGS = 1 M 75 VGVGSM Transient 20 VS(TAB)ID25 TC = 25C76 A

 9.3. Size:175K  ixys
 ixta70n085t ixtp70n085t.pdf

IXTP7N45A IXTP7N45A

Preliminary Technical InformationIXTA70N085T VDSS = 85 VTrenchMVTMIXTP70N085T ID25 = 70 APower MOSFET RDS(on) 13.5 m N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-263 (IXTA)VDSS TJ = 25C to 175C85 VVDGR TJ = 25C to 175C; RGS = 1 M 85 VGVGSM Transient 20 VS(TAB)ID25 TC = 25C70 A

 9.4. Size:301K  cn vbsemi
 ixtp70n075t2.pdf

IXTP7N45A IXTP7N45A

IXTP70N075T2www.VBsemi.comN-Channel 80 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETaVDS (V) RDS(on) () Max. ID (A) Qg (Typ.) 100 % Rg and UIS Tested0.0065at VGS = 10 V 8080 0.0070at VGS = 6.0 V 75 17.1 nCAPPLICATIONS0.0085at VGS = 4.5 V 65 Primary Side SwitchingTO-220AB Synchronous RectificationD DC/AC Inverters LED Bac

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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