IXTP64N10L2 Specs and Replacement

Type Designator: IXTP64N10L2

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 357 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 64 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 27 nS

Cossⓘ - Output Capacitance: 720 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.032 Ohm

Package: TO-220AB

IXTP64N10L2 substitution

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IXTP64N10L2 datasheet

 ..1. Size:167K  ixys
ixta64n10l2 ixth64n10l2 ixtp64n10l2.pdf pdf_icon

IXTP64N10L2

Advance Technical Information LinearL2TM Power VDSS = 100V IXTA64N10L2 MOSFETs w/Extended ID25 = 64A IXTP64N10L2 RDS(on) 32m FBSOA IXTH64N10L2 N-Channel Enhancement Mode TO-263AA (IXTA) Guaranteed FBSOA Avalanche Rated G S D (Tab) TO-220AB (IXTP) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 100 V VDGR TJ = 25 C... See More ⇒

 7.1. Size:170K  ixys
ixtp64n055t ixty64n055t.pdf pdf_icon

IXTP64N10L2

Preliminary Technical Information IXTP64N055T VDSS = 55 V TrenchMVTM IXTY64N055T ID25 = 64 A Power MOSFET RDS(on) 13 m N-Channel Enhancement Mode Avalanche Rated TO-220 (IXTP) D (TAB) G D S Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 175 C55 V TO-252 (IXTY) VDGR TJ = 25 C to 175 C; RGS = 1 M 55 V VGSM Transient 20 V G... See More ⇒

 9.1. Size:252K  ixys
ixta62n15p ixtp62n15p ixtq62n15p.pdf pdf_icon

IXTP64N10L2

IXTA 62N15P VDSS = 150 V PolarHTTM IXTP 62N15P ID25 = 62 A Power MOSFET IXTQ 62N15P RDS(on) 40 m N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 175 C 150 V G S VDGR TJ = 25 C to 175 C; RGS = 1 M 150 V (TAB) VGS Continuous 20 V VGSM Transient 30 V TO-220 (I... See More ⇒

 9.2. Size:206K  ixys
ixta6n50d2 ixtp6n50d2 ixth6n50d2.pdf pdf_icon

IXTP64N10L2

Preliminary Technical Information Depletion Mode VDSX = 500V IXTA6N50D2 MOSFET ID(on) > 6A IXTP6N50D2 RDS(on) 500m IXTH6N50D2 N-Channel TO-263 AA (IXTA) G S D (Tab) Symbol Test Conditions Maximum Ratings TO-220AB (IXTP) VDSX TJ = 25 C to 150 C 500 V VGSX Continuous 20 V VGSM Transient 30 V PD TC = 25 C 300 W G D D (Tab) TJ - 55 .... See More ⇒

Detailed specifications: IXTP8N65X2, IXTP80N075L2, IXTP7N50A, IXTP7N50, IXTP7N45A, IXTP7N45, IXTP6N60A, IXTP6N60, IRF640, IXTP4N95A, IXTP4N95, IXTP4N90A, IXTP4N90, IXTP4N80A, IXTP4N80, IXTP4N65X2, IXTP4N50A

Keywords - IXTP64N10L2 MOSFET specs

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