IXTP4N95 Datasheet and Replacement
Type Designator: IXTP4N95
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 950 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 30 nS
Cossⓘ - Output Capacitance: 100 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 4 Ohm
Package: TO-220
IXTP4N95 substitution
IXTP4N95 Datasheet (PDF)
ixtm4n100 ixtm4n100a ixtm4n95 ixtm4n95a ixtp4n100 ixtp4n100a ixtp4n95 ixtp4n95a.pdf
ixta4n65x2 ixtp4n65x2 ixty4n65x2.pdf
Preliminary Technical InformationX2-Class VDSS = 650VIXTY4N65X2Power MOSFET ID25 = 4AIXTA4N65X2 RDS(on) 850m IXTP4N65X2N-Channel Enhancement ModeTO-252 (IXTY)G SSymbol Test Conditions Maximum Ratings D (Tab)VDSS TJ = 25C to 150C 650 VTO-263 (IXTA)VDGR TJ = 25C to 150C, RGS = 1M 650 VVGSS Continuous 30 VG
ixty4n65x2 ixta4n65x2 ixtp4n65x2.pdf
X2-Class VDSS = 650VIXTY4N65X2Power MOSFET ID25 = 4AIXTA4N65X2 RDS(on) 850m IXTP4N65X2N-Channel Enhancement ModeTO-252 (IXTY)G SSymbol Test Conditions Maximum Ratings D (Tab)VDSS TJ = 25C to 150C 650 VTO-263 (IXTA)VDGR TJ = 25C to 150C, RGS = 1M 650 VVGSS Continuous 30 VGVGSM Transient 40 VSID25 TC
Datasheet: IXTP7N50A , IXTP7N50 , IXTP7N45A , IXTP7N45 , IXTP6N60A , IXTP6N60 , IXTP64N10L2 , IXTP4N95A , IRLZ44N , IXTP4N90A , IXTP4N90 , IXTP4N80A , IXTP4N80 , IXTP4N65X2 , IXTP4N50A , IXTP4N50 , IXTP4N45A .
History: NCE65T260D | NCE65T1K2F
Keywords - IXTP4N95 MOSFET datasheet
IXTP4N95 cross reference
IXTP4N95 equivalent finder
IXTP4N95 lookup
IXTP4N95 substitution
IXTP4N95 replacement
Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: NCE65T260D | NCE65T1K2F
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