IXTP4N50A Datasheet and Replacement
Type Designator: IXTP4N50A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 75 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 75 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
Package: TO-220
IXTP4N50A substitution
IXTP4N50A Datasheet (PDF)
ixta4n65x2 ixtp4n65x2 ixty4n65x2.pdf
Preliminary Technical InformationX2-Class VDSS = 650VIXTY4N65X2Power MOSFET ID25 = 4AIXTA4N65X2 RDS(on) 850m IXTP4N65X2N-Channel Enhancement ModeTO-252 (IXTY)G SSymbol Test Conditions Maximum Ratings D (Tab)VDSS TJ = 25C to 150C 650 VTO-263 (IXTA)VDGR TJ = 25C to 150C, RGS = 1M 650 VVGSS Continuous 30 VG
ixty4n65x2 ixta4n65x2 ixtp4n65x2.pdf
X2-Class VDSS = 650VIXTY4N65X2Power MOSFET ID25 = 4AIXTA4N65X2 RDS(on) 850m IXTP4N65X2N-Channel Enhancement ModeTO-252 (IXTY)G SSymbol Test Conditions Maximum Ratings D (Tab)VDSS TJ = 25C to 150C 650 VTO-263 (IXTA)VDGR TJ = 25C to 150C, RGS = 1M 650 VVGSS Continuous 30 VGVGSM Transient 40 VSID25 TC
ixtm4n100 ixtm4n100a ixtm4n95 ixtm4n95a ixtp4n100 ixtp4n100a ixtp4n95 ixtp4n95a.pdf
Datasheet: IXTP64N10L2 , IXTP4N95A , IXTP4N95 , IXTP4N90A , IXTP4N90 , IXTP4N80A , IXTP4N80 , IXTP4N65X2 , P55NF06 , IXTP4N50 , IXTP4N45A , IXTP4N45 , IXTP4N100A , IXTP4N100 , IXTP3N90A , IXTP3N90 , IXTP3N80A .
History: INJ0002AM1
Keywords - IXTP4N50A MOSFET datasheet
IXTP4N50A cross reference
IXTP4N50A equivalent finder
IXTP4N50A lookup
IXTP4N50A substitution
IXTP4N50A replacement
History: INJ0002AM1
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