All MOSFET. IXTP4N50A Datasheet

 

IXTP4N50A Datasheet and Replacement


   Type Designator: IXTP4N50A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 75 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 75 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
   Package: TO-220
 

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IXTP4N50A Datasheet (PDF)

 ..1. Size:64K  ixys
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IXTP4N50A

 8.1. Size:238K  ixys
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IXTP4N50A

Preliminary Technical InformationX2-Class VDSS = 650VIXTY4N65X2Power MOSFET ID25 = 4AIXTA4N65X2 RDS(on) 850m IXTP4N65X2N-Channel Enhancement ModeTO-252 (IXTY)G SSymbol Test Conditions Maximum Ratings D (Tab)VDSS TJ = 25C to 150C 650 VTO-263 (IXTA)VDGR TJ = 25C to 150C, RGS = 1M 650 VVGSS Continuous 30 VG

 8.2. Size:313K  ixys
 ixty4n65x2 ixta4n65x2 ixtp4n65x2.pdf pdf_icon

IXTP4N50A

X2-Class VDSS = 650VIXTY4N65X2Power MOSFET ID25 = 4AIXTA4N65X2 RDS(on) 850m IXTP4N65X2N-Channel Enhancement ModeTO-252 (IXTY)G SSymbol Test Conditions Maximum Ratings D (Tab)VDSS TJ = 25C to 150C 650 VTO-263 (IXTA)VDGR TJ = 25C to 150C, RGS = 1M 650 VVGSS Continuous 30 VGVGSM Transient 40 VSID25 TC

 8.3. Size:66K  ixys
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IXTP4N50A

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Datasheet: IXTP64N10L2 , IXTP4N95A , IXTP4N95 , IXTP4N90A , IXTP4N90 , IXTP4N80A , IXTP4N80 , IXTP4N65X2 , IRF3710 , IXTP4N50 , IXTP4N45A , IXTP4N45 , IXTP4N100A , IXTP4N100 , IXTP3N90A , IXTP3N90 , IXTP3N80A .

History: IXTH88N30P

Keywords - IXTP4N50A MOSFET datasheet

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