All MOSFET. IXTP3N80 Datasheet

 

IXTP3N80 MOSFET. Datasheet pdf. Equivalent


   Type Designator: IXTP3N80
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 75 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id|ⓘ - Maximum Drain Current: 3 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 70 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 6 Ohm
   Package: TO-220

 IXTP3N80 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IXTP3N80 Datasheet (PDF)

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 ixtm3n80 ixtm3n80a ixtm3n90 ixtm3n90a ixtp3n80 ixtp3n80a ixtp3n90 ixtp3n90a.pdf

IXTP3N80

 8.1. Size:237K  ixys
 ixta3n50p ixtp3n50p ixty3n50p.pdf

IXTP3N80 IXTP3N80

IXTA 3N50P VDSS = 500 VPolarHVTMIXTP 3N50P ID25 = 3.6 APower MOSFET IXTY 3N50P RDS(on) 2.0 N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-220 (IXTP)VDSS TJ = 25 C to 150 C 500 VVDGR TJ = 25 C to 150 C; RGS = 1 M 500 VVGSS 30 VVGSM 40 V(TAB)GDSID25 TC = 25 C 3.6 AIDM

 8.2. Size:168K  ixys
 ixta3n50d2-ixtp3n50d2.pdf

IXTP3N80 IXTP3N80

Depletion Mode VDSX = 500VIXTA3N50D2MOSFET ID(on) > 3AIXTP3N50D2 RDS(on) 1.5 N-ChannelTO-263 AA (IXTA)GSymbol Test Conditions Maximum RatingsSVDSX TJ = 25C to 150C 500 VD (Tab)VGSX Continuous 20 VVGSM Transient 30 VTO-220AB (IXTP)PD TC = 25C 125 WTJ - 55 ... +150 CTJM 150 CTstg - 55 ... +150 CGDD (Tab)

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 ixta3n120 ixtp3n120.pdf

IXTP3N80 IXTP3N80

VDSS ID25 RDS(on)High VoltageIXTA 3N120Power MOSFETs 1200 V 3 A 4.5 IXTP 3N120N-Channel Enhancement ModeAvalanche Rated, High dv/dtSymbol Test Conditions Maximum RatingsTO-220 (IXTP)VDSS TJ = 25C to 150C 1200 VVDGR TJ = 25C to 150C; RGS = 1 M 1200 VVGS Continuous 20 VD (TAB)GVGSM Transient 30 V DSID25 TC = 25C3 AIDM TC =

 8.4. Size:150K  ixys
 ixta3n100p ixth3n100p ixtp3n100p.pdf

IXTP3N80 IXTP3N80

IXTA3N100P VDSS = 1000VPolar VHVTMIXTH3N100P ID25 = 3APower MOSFET IXTP3N100P RDS(on) 4.8 N-Channel Enhancement ModeAvalanche RatedTO-263 (IXTA)GSSymbol Test Conditions Maximum Ratings(TAB)VDSS TJ = 25C to 150C 1000 VTO-220 (IXTP)VDGR TJ = 25C to 150C, RGS = 1M 1000 VVGSS Continuous 20 VVGSM Transient 30 V(TAB)

 8.5. Size:175K  ixys
 ixta3n120 ixtp3n120 ixth3n120.pdf

IXTP3N80 IXTP3N80

High Voltage VDSS = 1200VIXTA3N120Power MOSFET ID25 = 3AIXTP3N120 RDS(on) 4.5 IXTH3N120N-Channel Enhancement ModeTO-263 AA (IXTA)Avalanche RatedFast Intrinsic DiodeGSD (Tab)Symbol Test Conditions Maximum RatingsTO-220AB (IXTP)VDSS TJ = 25C to 150C 1200 VVDGR TJ = 25C to 150C, RGS = 1M 1200 VVGSS Continuous

 8.6. Size:228K  ixys
 ixta3n60p ixtp3n60p ixty3n60p.pdf

IXTP3N80 IXTP3N80

IXTA 3N60PVDSS = 600 VPolarHVTMIXTP 3N60PID25 = 3.0 APower MOSFETIXTY 3N60P RDS(on) 2.9 N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-263 (IXTA)VDSS TJ = 25 C to 150 C 600 VVDGR TJ = 25 C to 150 C; RGS = 1 M 600 VVGS Continuous 30 VGSVGSM Transient 40 V(TAB)ID25 T

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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