IXTP20N65X Specs and Replacement

Type Designator: IXTP20N65X

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 320 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 20 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 30 nS

Cossⓘ - Output Capacitance: 1060 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.21 Ohm

Package: TO-220

IXTP20N65X substitution

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IXTP20N65X datasheet

 ..1. Size:231K  ixys
 ixta20n65x ixth20n65x ixtp20n65x.pdf pdf_icon

IXTP20N65X

Preliminary Technical Information X-Class VDSS = 650V IXTA20N65X Power MOSFET ID25 = 20A IXTP20N65X RDS(on) 210m IXTH20N65X N-Channel Enhancement Mode TO-263 (IXTA) G S D (Tab) Symbol Test Conditions Maximum Ratings TO-220 (IXTP) VDSS TJ = 25 C to 150 C 650 V VDGR TJ = 25 C to 150 C, RGS = 1M 650 V VGSS Continuous 30 V VG... See More ⇒

 0.1. Size:127K  ixys
 ixtp20n65xm.pdf pdf_icon

IXTP20N65X

Preliminary Technical Information X-Class VDSS = 650V IXTP20N65XM Power MOSFET ID25 = 9A RDS(on) 210m N-Channel Enhancement Mode OVERMOLDED Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 650 V G D S VDGR TJ = 25 C to 150 C, RGS = 1M 650 V VGSS Continuous 30 V G = Gate D = Drain VGSM Transient 40 V S = So... See More ⇒

 8.1. Size:215K  ixys
 ixta200n085t ixtp200n085t.pdf pdf_icon

IXTP20N65X

Preliminary Technical Information IXTA 200N085T VDSS = 85 V TrenchMVTM IXTP 200N085T ID25 = 200 A Power MOSFET RDS(on) 5.0 m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (IXTA) VDSS TJ = 25 C to 175 C85 V VDGR TJ = 25 C to 175 C; RGS = 1 M 85 V G VGSM Transient 20 V S (TAB) ID25... See More ⇒

 8.2. Size:215K  ixys
 ixta200n075t ixtp200n075t.pdf pdf_icon

IXTP20N65X

Preliminary Technical Information IXTA200N075T VDSS = 75 V TrenchMVTM IXTP200N075T ID25 = 200 A Power MOSFET RDS(on) 5.0 m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (IXTA) VDSS TJ = 25 C to 175 C75 V VDGR TJ = 25 C to 175 C; RGS = 1 M 75 V G VGSM Transient 20 V S (TAB) ID25... See More ⇒

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Detailed specifications: IXTP32N65XM, IXTP32N65X, IXTP2N95A, IXTP2N95, IXTP2N65X2, IXTP2N100A, IXTP270N04T4, IXTP20N65XM, AO3401, IXTP180N055T, IXTP160N085T, IXTP12N65X2, IXTN210P10T, IXTN120P20T, IXTN102N65X2, IXTM7N50A, IXTM7N50

Keywords - IXTP20N65X MOSFET specs

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