All MOSFET. IXTP20N65X Datasheet

 

IXTP20N65X MOSFET. Datasheet pdf. Equivalent


   Type Designator: IXTP20N65X
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 320 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5.5 V
   |Id|ⓘ - Maximum Drain Current: 20 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 35 nC
   trⓘ - Rise Time: 30 nS
   Cossⓘ - Output Capacitance: 1060 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.21 Ohm
   Package: TO-220

 IXTP20N65X Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IXTP20N65X Datasheet (PDF)

 ..1. Size:231K  ixys
 ixta20n65x ixth20n65x ixtp20n65x.pdf

IXTP20N65X IXTP20N65X

Preliminary Technical InformationX-Class VDSS = 650VIXTA20N65XPower MOSFET ID25 = 20AIXTP20N65X RDS(on) 210m IXTH20N65XN-Channel Enhancement ModeTO-263 (IXTA)GSD (Tab)Symbol Test Conditions Maximum RatingsTO-220 (IXTP)VDSS TJ = 25C to 150C 650 VVDGR TJ = 25C to 150C, RGS = 1M 650 VVGSS Continuous 30 VVG

 0.1. Size:127K  ixys
 ixtp20n65xm.pdf

IXTP20N65X IXTP20N65X

Preliminary Technical InformationX-Class VDSS = 650VIXTP20N65XMPower MOSFET ID25 = 9A RDS(on) 210m N-Channel Enhancement ModeOVERMOLDEDSymbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 650 VGDSVDGR TJ = 25C to 150C, RGS = 1M 650 VVGSS Continuous 30 VG = Gate D = DrainVGSM Transient 40 VS = So

 8.1. Size:215K  ixys
 ixta200n085t ixtp200n085t.pdf

IXTP20N65X IXTP20N65X

Preliminary Technical InformationIXTA 200N085T VDSS = 85 VTrenchMVTMIXTP 200N085T ID25 = 200 APower MOSFET RDS(on) 5.0 m N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-263 (IXTA)VDSS TJ = 25 C to 175 C85 VVDGR TJ = 25 C to 175 C; RGS = 1 M 85 VGVGSM Transient 20 VS(TAB)ID25

 8.2. Size:215K  ixys
 ixta200n075t ixtp200n075t.pdf

IXTP20N65X IXTP20N65X

Preliminary Technical InformationIXTA200N075TVDSS = 75 VTrenchMVTMIXTP200N075TID25 = 200 APower MOSFET RDS(on) 5.0 m N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-263 (IXTA)VDSS TJ = 25 C to 175 C75 VVDGR TJ = 25 C to 175 C; RGS = 1 M 75 VGVGSM Transient 20 VS(TAB)ID25

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

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