All MOSFET. IXTM7N50 Datasheet

 

IXTM7N50 Datasheet and Replacement


   Type Designator: IXTM7N50
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 155 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.1 Ohm
   Package: TO3
 

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IXTM7N50 Datasheet (PDF)

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IXTM7N50

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IXTM7N50

VDSS ID25 RDS(on)MegaMOSTMFETIXTH / IXTM 67N10100 V 67 A 25 mIXTH / IXTM 75N10100 V 75 A 20 mIXTT 75N10N-Channel Enhancement ModeTO-247 AD (IXTH)Symbol Test Conditions Maximum Ratings(TAB)VDSS TJ = 25C to 150C 100 VVDGR TJ = 25C to 150C; RGS = 1 M 100 VTO-204 AE (IXTM)VGS Continuous 20 VVGSM Transient 30

Datasheet: IXTP20N65X , IXTP180N055T , IXTP160N085T , IXTP12N65X2 , IXTN210P10T , IXTN120P20T , IXTN102N65X2 , IXTM7N50A , RFP50N06 , IXTM7N45A , IXTM7N45 , IXTM6N60A , IXTM6N60 , IXTM4N95A , IXTM4N95 , IXTM4N90A , IXTM4N90 .

History: SVF840MJ

Keywords - IXTM7N50 MOSFET datasheet

 IXTM7N50 cross reference
 IXTM7N50 equivalent finder
 IXTM7N50 lookup
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