IXTM7N50 Specs and Replacement

Type Designator: IXTM7N50

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 155 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.1 Ohm

Package: TO3

IXTM7N50 substitution

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IXTM7N50 datasheet

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IXTM7N50

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IXTM7N50

VDSS ID25 RDS(on) MegaMOSTMFET IXTH / IXTM 67N10 100 V 67 A 25 m IXTH / IXTM 75N10 100 V 75 A 20 m IXTT 75N10 N-Channel Enhancement Mode TO-247 AD (IXTH) Symbol Test Conditions Maximum Ratings (TAB) VDSS TJ = 25 C to 150 C 100 V VDGR TJ = 25 C to 150 C; RGS = 1 M 100 V TO-204 AE (IXTM) VGS Continuous 20 V VGSM Transient 30 ... See More ⇒

Detailed specifications: IXTP20N65X, IXTP180N055T, IXTP160N085T, IXTP12N65X2, IXTN210P10T, IXTN120P20T, IXTN102N65X2, IXTM7N50A, AON7410, IXTM7N45A, IXTM7N45, IXTM6N60A, IXTM6N60, IXTM4N95A, IXTM4N95, IXTM4N90A, IXTM4N90

Keywords - IXTM7N50 MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.