IXTM6N60A Specs and Replacement

Type Designator: IXTM6N60A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 30 nS

Cossⓘ - Output Capacitance: 155 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm

Package: TO3

IXTM6N60A substitution

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IXTM6N60A datasheet

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IXTM6N60A

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IXTM6N60A

VDSS ID25 RDS(on) Standard IXTH / IXTM 6N90 900 V 6 A 1.8 Power MOSFET IXTH / IXTM 6N90A 900 V 6 A 1.4 N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings TO-247 AD (IXTH) VDSS TJ = 25 C to 150 C 900 V VDGR TJ = 25 C to 150 C; RGS = 1 M 900 V D (TAB) VGS Continuous 20 V VGSM Transient 30 V ID25 TC = 25 C6 A T... See More ⇒

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 ixth6n80-a ixtm6n80-a.pdf pdf_icon

IXTM6N60A

VDSS ID25 RDS(on) Standard IXTH / IXTM 6N80 800 V 6 A 1.8 Power MOSFET IXTH / IXTM 6N80A 800 V 6 A 1.4 N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings TO-247 AD (IXTH) VDSS TJ = 25 C to 150 C 800 V VDGR TJ = 25 C to 150 C; RGS = 1 M 800 V VGS Continuous 20 V D (TAB) VGSM Transient 30 V ID25 TC = 25 C6 A TO... See More ⇒

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 ixth67n10 ixtm67n10 ixth75n10 ixtm75n10 ixtt75n10.pdf pdf_icon

IXTM6N60A

VDSS ID25 RDS(on) MegaMOSTMFET IXTH / IXTM 67N10 100 V 67 A 25 m IXTH / IXTM 75N10 100 V 75 A 20 m IXTT 75N10 N-Channel Enhancement Mode TO-247 AD (IXTH) Symbol Test Conditions Maximum Ratings (TAB) VDSS TJ = 25 C to 150 C 100 V VDGR TJ = 25 C to 150 C; RGS = 1 M 100 V TO-204 AE (IXTM) VGS Continuous 20 V VGSM Transient 30 ... See More ⇒

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Detailed specifications: IXTP12N65X2, IXTN210P10T, IXTN120P20T, IXTN102N65X2, IXTM7N50A, IXTM7N50, IXTM7N45A, IXTM7N45, IRF1010E, IXTM6N60, IXTM4N95A, IXTM4N95, IXTM4N90A, IXTM4N90, IXTM4N80A, IXTM4N80, IXTM4N50A

Keywords - IXTM6N60A MOSFET specs

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