All MOSFET. IXTM4N95 Datasheet

 

IXTM4N95 Datasheet and Replacement


   Type Designator: IXTM4N95
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 950 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 30 nS
   Cossⓘ - Output Capacitance: 100 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 4 Ohm
   Package: TO3
 

 IXTM4N95 substitution

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IXTM4N95 Datasheet (PDF)

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IXTM4N95

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IXTM4N95

 8.1. Size:64K  ixys
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IXTM4N95

 9.1. Size:107K  ixys
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IXTM4N95

VDSS ID25 RDS(on)MegaMOSTMFET IXTH 35N30 300 V 35 A 0.10 IXTH 40N30 300 V 40 A 0.085 IXTM 40N30 300 V 40 A 0.088 N-Channel Enhancement ModeSymbol Test Conditions Maximum Ratings TO-247 AD (IXTH)VDSS TJ = 25C to 150C 300 VVDGR TJ = 25C to 150C; RGS = 1 M 300 VVGS Continuous 20 V D (TAB)VGSM Tra

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Datasheet: IXTN102N65X2 , IXTM7N50A , IXTM7N50 , IXTM7N45A , IXTM7N45 , IXTM6N60A , IXTM6N60 , IXTM4N95A , AO4407 , IXTM4N90A , IXTM4N90 , IXTM4N80A , IXTM4N80 , IXTM4N50A , IXTM4N50 , IXTM4N45A , IXTM4N45 .

History: HY0810S | IPB120N08S4-03 | IXFV110N10P | CS65N20-30 | SQM90142E | DMG8880LSS | C3M0065100K

Keywords - IXTM4N95 MOSFET datasheet

 IXTM4N95 cross reference
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