IXTM4N95 Specs and Replacement

Type Designator: IXTM4N95

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 950 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 30 nS

Cossⓘ - Output Capacitance: 100 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 4 Ohm

Package: TO3

IXTM4N95 substitution

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IXTM4N95 datasheet

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IXTM4N95

VDSS ID25 RDS(on) MegaMOSTMFET IXTH 35N30 300 V 35 A 0.10 IXTH 40N30 300 V 40 A 0.085 IXTM 40N30 300 V 40 A 0.088 N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings TO-247 AD (IXTH) VDSS TJ = 25 C to 150 C 300 V VDGR TJ = 25 C to 150 C; RGS = 1 M 300 V VGS Continuous 20 V D (TAB) VGSM Tra... See More ⇒

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Detailed specifications: IXTN102N65X2, IXTM7N50A, IXTM7N50, IXTM7N45A, IXTM7N45, IXTM6N60A, IXTM6N60, IXTM4N95A, IRF530, IXTM4N90A, IXTM4N90, IXTM4N80A, IXTM4N80, IXTM4N50A, IXTM4N50, IXTM4N45A, IXTM4N45

Keywords - IXTM4N95 MOSFET specs

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