All MOSFET. IXTM4N80A Datasheet

 

IXTM4N80A Datasheet and Replacement


   Type Designator: IXTM4N80A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 30 nS
   Cossⓘ - Output Capacitance: 110 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.4 Ohm
   Package: TO3
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IXTM4N80A Datasheet (PDF)

 ..1. Size:64K  ixys
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IXTM4N80A

 8.1. Size:66K  ixys
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IXTM4N80A

 8.2. Size:64K  ixys
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IXTM4N80A

 9.1. Size:107K  ixys
 ixth35n30 ixth40n30 ixtm40n30.pdf pdf_icon

IXTM4N80A

VDSS ID25 RDS(on)MegaMOSTMFET IXTH 35N30 300 V 35 A 0.10 IXTH 40N30 300 V 40 A 0.085 IXTM 40N30 300 V 40 A 0.088 N-Channel Enhancement ModeSymbol Test Conditions Maximum Ratings TO-247 AD (IXTH)VDSS TJ = 25C to 150C 300 VVDGR TJ = 25C to 150C; RGS = 1 M 300 VVGS Continuous 20 V D (TAB)VGSM Tra

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Keywords - IXTM4N80A MOSFET datasheet

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