All MOSFET. IXTM4N45 Datasheet

 

IXTM4N45 Datasheet and Replacement


   Type Designator: IXTM4N45
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 75 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 450 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 75 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm
   Package: TO3
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IXTM4N45 Datasheet (PDF)

 ..1. Size:64K  ixys
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IXTM4N45

 8.1. Size:66K  ixys
 ixtm4n100 ixtm4n100a ixtm4n95 ixtm4n95a ixtp4n100 ixtp4n100a ixtp4n95 ixtp4n95a.pdf pdf_icon

IXTM4N45

 8.2. Size:64K  ixys
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IXTM4N45

 9.1. Size:107K  ixys
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IXTM4N45

VDSS ID25 RDS(on)MegaMOSTMFET IXTH 35N30 300 V 35 A 0.10 IXTH 40N30 300 V 40 A 0.085 IXTM 40N30 300 V 40 A 0.088 N-Channel Enhancement ModeSymbol Test Conditions Maximum Ratings TO-247 AD (IXTH)VDSS TJ = 25C to 150C 300 VVDGR TJ = 25C to 150C; RGS = 1 M 300 VVGS Continuous 20 V D (TAB)VGSM Tra

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History: CHM85A3PAGP | TK7P65W | ALD1103DB | SQ9407EY-T1 | SFFX054Z

Keywords - IXTM4N45 MOSFET datasheet

 IXTM4N45 cross reference
 IXTM4N45 equivalent finder
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