IXTM2N100A MOSFET. Datasheet pdf. Equivalent
Type Designator: IXTM2N100A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 75 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
|Id|ⓘ - Maximum Drain Current: 2 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 60 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 6 Ohm
Package: TO3
IXTM2N100A Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IXTM2N100A Datasheet (PDF)
ixth15n60 ixtm15n60 ixth20n60 ixtm20n60.pdf
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ixth20n60 ixtm20n60.pdf
IXTH 20N60 VDSS = 600 VMegaMOSTMFETIXTM 20N60 ID25 = 20 ARDS(on) = 0.35 N-Channel Enhancement ModeSymbol Test Conditions Maximum Ratings TO-247 AD (IXTH)VDSS TJ = 25C to 150C 600 VVDGR TJ = 25C to 150C; RGS = 1 M 600 VVGS Continuous 20 V D (TAB)VGSM Transient 30 VID25 TC = 25C 15N60 15 ATO-204 AE (IXTM)20N60 20 AIDM TC = 25C, p
ixth21n50 ixth24n50 ixtm21n50 ixtm24n50.pdf
VDSS ID25 RDS(on)MegaMOSTMFETIXTH / IXTM 21N50 500 V 21 A 0.25 IXTH / IXTM 24N50 500 V 24 A 0.23 N-Channel Enhancement ModeSymbol Test Conditions Maximum Ratings TO-247 AD (IXTH)VDSS TJ = 25C to 150C 500 VVDGR TJ = 25C to 150C; RGS = 1 M 500 VD (TAB)VGS Continuous 20 VVGSM Transient 30 VID25 TC = 25C 21N50 21 A
ixtm24n50.pdf
Isc N-Channel MOSFET Transistor IXTM24N50FEATURESWith To-3 packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 500
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRFP250N , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
History: IXTP160N075T
History: IXTP160N075T
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