All MOSFET. IXTM2N100A Datasheet

 

IXTM2N100A Datasheet and Replacement


   Type Designator: IXTM2N100A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 75 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 60 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 6 Ohm
   Package: TO3
 

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IXTM2N100A Datasheet (PDF)

 ..1. Size:65K  ixys
 ixtm2n100 ixtm2n100a ixtm2n95 ixtm2n95a ixtp2n100a ixtp2n95 ixtp2n95a.pdf pdf_icon

IXTM2N100A

 9.1. Size:316K  ixys
 ixth15n60 ixtm15n60 ixth20n60 ixtm20n60.pdf pdf_icon

IXTM2N100A

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 9.2. Size:105K  ixys
 ixth20n60 ixtm20n60.pdf pdf_icon

IXTM2N100A

IXTH 20N60 VDSS = 600 VMegaMOSTMFETIXTM 20N60 ID25 = 20 ARDS(on) = 0.35 N-Channel Enhancement ModeSymbol Test Conditions Maximum Ratings TO-247 AD (IXTH)VDSS TJ = 25C to 150C 600 VVDGR TJ = 25C to 150C; RGS = 1 M 600 VVGS Continuous 20 V D (TAB)VGSM Transient 30 VID25 TC = 25C 15N60 15 ATO-204 AE (IXTM)20N60 20 AIDM TC = 25C, p

 9.3. Size:108K  ixys
 ixth21n50 ixth24n50 ixtm21n50 ixtm24n50.pdf pdf_icon

IXTM2N100A

VDSS ID25 RDS(on)MegaMOSTMFETIXTH / IXTM 21N50 500 V 21 A 0.25 IXTH / IXTM 24N50 500 V 24 A 0.23 N-Channel Enhancement ModeSymbol Test Conditions Maximum Ratings TO-247 AD (IXTH)VDSS TJ = 25C to 150C 500 VVDGR TJ = 25C to 150C; RGS = 1 M 500 VD (TAB)VGS Continuous 20 VVGSM Transient 30 VID25 TC = 25C 21N50 21 A

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Datasheet: IXTM4N100A , IXTM4N100 , IXTM3N90A , IXTM3N90 , IXTM3N80A , IXTM3N80 , IXTM2N95A , IXTM2N95 , 4N60 , IXTM2N100 , IXTM15N50A , IXTM15N45A , IXTM12N50 , IXTM12N45A , IXTM12N45 , IXTM10N60A , IXTM10N60 .

Keywords - IXTM2N100A MOSFET datasheet

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