IXTM2N100 Specs and Replacement

Type Designator: IXTM2N100

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 75 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 60 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 7 Ohm

Package: TO3

IXTM2N100 substitution

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IXTM2N100 datasheet

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 ixtm2n100 ixtm2n100a ixtm2n95 ixtm2n95a ixtp2n100a ixtp2n95 ixtp2n95a.pdf pdf_icon

IXTM2N100

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 ixth15n60 ixtm15n60 ixth20n60 ixtm20n60.pdf pdf_icon

IXTM2N100

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 ixth20n60 ixtm20n60.pdf pdf_icon

IXTM2N100

IXTH 20N60 VDSS = 600 V MegaMOSTMFET IXTM 20N60 ID25 = 20 A RDS(on) = 0.35 N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings TO-247 AD (IXTH) VDSS TJ = 25 C to 150 C 600 V VDGR TJ = 25 C to 150 C; RGS = 1 M 600 V VGS Continuous 20 V D (TAB) VGSM Transient 30 V ID25 TC = 25 C 15N60 15 A TO-204 AE (IXTM) 20N60 20 A IDM TC = 25 C, p... See More ⇒

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 ixth21n50 ixth24n50 ixtm21n50 ixtm24n50.pdf pdf_icon

IXTM2N100

VDSS ID25 RDS(on) MegaMOSTMFET IXTH / IXTM 21N50 500 V 21 A 0.25 IXTH / IXTM 24N50 500 V 24 A 0.23 N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings TO-247 AD (IXTH) VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C; RGS = 1 M 500 V D (TAB) VGS Continuous 20 V VGSM Transient 30 V ID25 TC = 25 C 21N50 21 A... See More ⇒

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Detailed specifications: IXTM4N100, IXTM3N90A, IXTM3N90, IXTM3N80A, IXTM3N80, IXTM2N95A, IXTM2N95, IXTM2N100A, 18N50, IXTM15N50A, IXTM15N45A, IXTM12N50, IXTM12N45A, IXTM12N45, IXTM10N60A, IXTM10N60, IXTL2X240N055T

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.