IXTM12N50 Datasheet and Replacement
Type Designator: IXTM12N50
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 175 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 12 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 25 nS
Cossⓘ - Output Capacitance: 290 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.5 Ohm
Package: TO3
IXTM12N50 substitution
IXTM12N50 Datasheet (PDF)
ixth12n50a ixtm12n50a.pdf
VDSS ID25 RDS(on)StandardIXTH 12 N50A 500 V 12 A 0.4 Power MOSFETIXTM 12 N50A 500 V 12 A 0.4 N-Channel Enhancement ModeSymbol Test Conditions Maximum Ratings TO-247 AD (IXTH)VDSS TJ = 25C to 150C 500 VVDGR TJ = 25C to 150C; RGS = 1 M 500 VD (TAB)VGS Continuous 20 VVGSM Transient 30 VID25 TC = 25C12 AIDM TC
ixth10n100 ixtm10n100 ixth12n100 ixtm12n100.pdf
VDSS ID25 RDS(on)MegaMOSTMFET IXTH / IXTM 10N100 1000 V 10 A 1.20 IXTH / IXTM 12N100 1000 V 12 A 1.05 N-Channel Enhancement ModeSymbol Test Conditions Maximum Ratings TO-247 AD (IXTH)VDSS TJ = 25C to 150C 1000 VVDGR TJ = 25C to 150C; RGS = 1 M 1000 VVGS Continuous 20 V D (TAB)VGSM Transient 30 VID25 TC = 25C 10N
Datasheet: IXTM3N80A , IXTM3N80 , IXTM2N95A , IXTM2N95 , IXTM2N100A , IXTM2N100 , IXTM15N50A , IXTM15N45A , IRFB31N20D , IXTM12N45A , IXTM12N45 , IXTM10N60A , IXTM10N60 , IXTL2X240N055T , IXTL2X220N075T , IXTL2X200N085T , IXTL2X180N10T .
History: 25N10G-TM3-T | APT4080BN
Keywords - IXTM12N50 MOSFET datasheet
IXTM12N50 cross reference
IXTM12N50 equivalent finder
IXTM12N50 lookup
IXTM12N50 substitution
IXTM12N50 replacement
History: 25N10G-TM3-T | APT4080BN
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