All MOSFET. IXTM12N45 Datasheet

 

IXTM12N45 Datasheet and Replacement


   Type Designator: IXTM12N45
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 175 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 450 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 12 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 290 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.5 Ohm
   Package: TO3
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IXTM12N45 Datasheet (PDF)

 ..1. Size:65K  ixys
 ixth12n45 ixth12n45a ixth12n50 ixtm12n45 ixtm12n45a ixtm12n50.pdf pdf_icon

IXTM12N45

 7.1. Size:105K  ixys
 ixth10n100 ixtm10n100 ixth12n100 ixtm12n100.pdf pdf_icon

IXTM12N45

VDSS ID25 RDS(on)MegaMOSTMFET IXTH / IXTM 10N100 1000 V 10 A 1.20 IXTH / IXTM 12N100 1000 V 12 A 1.05 N-Channel Enhancement ModeSymbol Test Conditions Maximum Ratings TO-247 AD (IXTH)VDSS TJ = 25C to 150C 1000 VVDGR TJ = 25C to 150C; RGS = 1 M 1000 VVGS Continuous 20 V D (TAB)VGSM Transient 30 VID25 TC = 25C 10N

 7.2. Size:62K  ixys
 ixth12n50a ixtm12n50a.pdf pdf_icon

IXTM12N45

VDSS ID25 RDS(on)StandardIXTH 12 N50A 500 V 12 A 0.4 Power MOSFETIXTM 12 N50A 500 V 12 A 0.4 N-Channel Enhancement ModeSymbol Test Conditions Maximum Ratings TO-247 AD (IXTH)VDSS TJ = 25C to 150C 500 VVDGR TJ = 25C to 150C; RGS = 1 M 500 VD (TAB)VGS Continuous 20 VVGSM Transient 30 VID25 TC = 25C12 AIDM TC

 7.3. Size:299K  ixys
 ixth10n90 ixtm10n90 ixth12n90 ixtm12n90.pdf pdf_icon

IXTM12N45

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History: SDU02N60

Keywords - IXTM12N45 MOSFET datasheet

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