All MOSFET. IRFP245 Datasheet

 

IRFP245 MOSFET. Datasheet pdf. Equivalent


   Type Designator: IRFP245
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Maximum Power Dissipation (Pd): 150 W
   Maximum Drain-Source Voltage |Vds|: 250 V
   Maximum Gate-Source Voltage |Vgs|: 20 V
   Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
   Maximum Drain Current |Id|: 14 A
   Maximum Junction Temperature (Tj): 150 °C
   Total Gate Charge (Qg): 39 nC
   Rise Time (tr): 67 nS
   Drain-Source Capacitance (Cd): 320 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.34 Ohm
   Package: TO247

 IRFP245 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRFP245 Datasheet (PDF)

 8.1. Size:873K  international rectifier
irfp240 irfp240pbf.pdf

IRFP245
IRFP245

PD - 95006IRFP240PbF Lead-Free2/11/04Document Number: 91210 www.vishay.com1IRP240PbFwww.vishay.comDocument Number: 912102IRFP240PbFDocument Number: 91210 www.vishay.com3IRP240PbFDocument Number: 91210 www.vishay.com4IRFP240PbFDocument Number: 91210 www.vishay.com5IRP240PbFDocument Number: 91210 www.vishay.com6IRFP240PbFTO-247AC Package Outl

 8.2. Size:147K  international rectifier
irfp2410.pdf

IRFP245
IRFP245

Preliminary Data Sheet PD - 9.1251IRFP2410HEXFET Power MOSFETAdvanced Process TechnologyUltra Low On-ResistanceDynamic dv/dt Rating VDSS = 100VRepetitive Avalanche Rated175C Operating TemperatureRDS(on) = 0.025Fast SwitchingEase of ParallelingID = 61ADescriptionFourth Generation HEXFETs from International Rectifier utilize advancedprocessing techniques to achi

 8.3. Size:490K  international rectifier
irfp240 irfp241 irfp242 irfp243.pdf

IRFP245
IRFP245

 8.4. Size:167K  international rectifier
irfp244.pdf

IRFP245
IRFP245

 8.5. Size:240K  international rectifier
irfp244pbf.pdf

IRFP245
IRFP245

PD - 95313IRFP244PbF Lead-Free6/1/04Document Number: 91211 www.vishay.com1IRFP244PbFDocument Number: 91211 www.vishay.com2IRFP244PbFDocument Number: 91211 www.vishay.com3IRFP244PbFDocument Number: 91211 www.vishay.com4IRFP244PbFDocument Number: 91211 www.vishay.com5IRFP244PbFDocument Number: 91211 www.vishay.com6IRFP244PbFTO-247AC Package Out

 8.6. Size:277K  st
irfp240 irfp240fi.pdf

IRFP245
IRFP245

 8.7. Size:933K  samsung
irfp240a.pdf

IRFP245
IRFP245

Advanced Power MOSFETFEATURESBVDSS = 200 V Avalanche Rugged TechnologyRDS(on) = 0.18 Rugged Gate Oxide Technology Lower Input CapacitanceID = 20 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 200V Lower RDS(ON) : 0.144 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Va

 8.8. Size:206K  samsung
irfp244a.pdf

IRFP245
IRFP245

 8.9. Size:1596K  vishay
irfp240 sihfp240.pdf

IRFP245
IRFP245

IRFP240, SiHFP240Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 200Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.18RoHS* Isolated Central Mounting HoleCOMPLIANTQg (Max.) (nC) 70 Fast SwitchingQgs (nC) 13 Ease of ParallelingQgd (nC) 39 Simple Drive RequirementsConfiguration Single Compli

 8.10. Size:902K  vishay
irfp244 sihfp244.pdf

IRFP245
IRFP245

IRFP244, SiHFP244Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 250Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.28RoHS* Isolated Central Mounting HoleCOMPLIANTQg (Max.) (nC) 63 Fast SwitchingQgs (nC) 12 Simple Drive RequirementsQgd (nC) 39 Compliant to RoHS Directive 2002/95/ECConfiguration

 8.11. Size:907K  infineon
irfp244 sihfp244.pdf

IRFP245
IRFP245

IRFP244, SiHFP244Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 250Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.28RoHS* Isolated Central Mounting HoleCOMPLIANTQg (Max.) (nC) 63 Fast SwitchingQgs (nC) 12 Simple Drive RequirementsQgd (nC) 39 Compliant to RoHS Directive 2002/95/ECConfiguration

 8.12. Size:72K  harris semi
irfp244-247.pdf

IRFP245
IRFP245

IRFP244, IRFP245,SemiconductorIRFP246, IRFP24715A and 14A, 275V and 250V, 0.28 and 0.34 Ohm,July 1998 N-Channel Power MOSFETsFeatures Description 15A and 14A, 275V and 250V These are N-Channel enhancement mode silicon gatepower field effect transistors. They are advanced power rDS(ON) = 0.28 and 0.34MOSFETs designed, tested, and guaranteed to withstand aspecified

 8.13. Size:62K  inchange semiconductor
irfp242r.pdf

IRFP245
IRFP245

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRFP242R FEATURES Drain Current ID= 18A@ TC=25 Drain Source Voltage- : VDSS= 200V(Min) Static Drain-Source On-Resistance : RDS(on) = 0.22(Max) Fast Switching DESCRIPTION Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RAT

 8.14. Size:62K  inchange semiconductor
irfp240r.pdf

IRFP245
IRFP245

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRFP240R FEATURES Drain Current ID= 20A@ TC=25 Drain Source Voltage- : VDSS= 200V(Min) Static Drain-Source On-Resistance : RDS(on) = 0.18(Max) Fast Switching DESCRIPTION Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RAT

Datasheet: IRFP240 , IRFP240A , IRFP240FI , IRFP241 , IRFP242 , IRFP243 , IRFP244 , IRFP244A , IRFZ44 , IRFP250 , IRFP250A , IRFP251 , IRFP252 , IRFP253 , IRFP254 , IRFP254A , IRFP255 .

 

 
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