IXTH64N65X Specs and Replacement

Type Designator: IXTH64N65X

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 890 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 64 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 25 nS

Cossⓘ - Output Capacitance: 4090 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.051 Ohm

Package: TO-247

IXTH64N65X substitution

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IXTH64N65X datasheet

 ..1. Size:154K  ixys
ixth64n65x.pdf pdf_icon

IXTH64N65X

Preliminary Technical Information X-Class VDSS = 650V IXTH64N65X Power MOSFET ID25 = 64A RDS(on) 51m N-Channel Enhancement Mode TO-247 (IXTH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 650 V VDGR TJ = 25 C to 150 C, RGS = 1M 650 V VGSS Continuous 30 V G D Tab VGSM Transient 40 V S ID25 TC = 25 C64... See More ⇒

 ..2. Size:211K  inchange semiconductor
ixth64n65x.pdf pdf_icon

IXTH64N65X

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IXTH64N65X FEATURES With TO-247 package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT ... See More ⇒

 7.1. Size:167K  ixys
ixta64n10l2 ixth64n10l2 ixtp64n10l2.pdf pdf_icon

IXTH64N65X

Advance Technical Information LinearL2TM Power VDSS = 100V IXTA64N10L2 MOSFETs w/Extended ID25 = 64A IXTP64N10L2 RDS(on) 32m FBSOA IXTH64N10L2 N-Channel Enhancement Mode TO-263AA (IXTA) Guaranteed FBSOA Avalanche Rated G S D (Tab) TO-220AB (IXTP) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 100 V VDGR TJ = 25 C... See More ⇒

 9.1. Size:128K  ixys
ixth68n20 ixtk74n20.pdf pdf_icon

IXTH64N65X

VDSS ID25 RDS(on) High Current IXTK 74 N20 200 V 74 A 35 mW MegaMOSTMFET IXTH 68 N20 200 V 68 A 35 mW N-Channel Enhancement Mode Preliminary data Symbol Test conditions Maximum ratings TO-247AD (IXTH) VDSS TJ = 25 C to 150 C 200 V VDGR TJ = 25 C to 150 C; RGS = 1.0 M 200 V D (TAB) VGS Continuous 20 V VGSM Transient 30 V ID25 TC = 25 C 74N20 74 A 68N20 68 A TO-264 AA (I... See More ⇒

Detailed specifications: IXTJ6N150, IXTJ4N150, IXTJ3N150, IXTI76N25T, IXTI12N50P, IXTI10N60P, IXTH80N65X2, IXTH80N075L2, AOD4184A, IXTH64N10L2, IXTH62N65X2, IXTH52N65X, IXTH4N100L, IXTH48N65X2, IXTH48N15, IXTH3N200P3HV, IXTH34N65X2

Keywords - IXTH64N65X MOSFET specs

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