IXTH64N65X Specs and Replacement
Type Designator: IXTH64N65X
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 890 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 64 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 25 nS
Cossⓘ -
Output Capacitance: 4090 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.051 Ohm
Package: TO-247
- MOSFET ⓘ Cross-Reference Search
IXTH64N65X datasheet
..1. Size:154K ixys
ixth64n65x.pdf 
Preliminary Technical Information X-Class VDSS = 650V IXTH64N65X Power MOSFET ID25 = 64A RDS(on) 51m N-Channel Enhancement Mode TO-247 (IXTH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 650 V VDGR TJ = 25 C to 150 C, RGS = 1M 650 V VGSS Continuous 30 V G D Tab VGSM Transient 40 V S ID25 TC = 25 C64... See More ⇒
..2. Size:211K inchange semiconductor
ixth64n65x.pdf 
INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IXTH64N65X FEATURES With TO-247 package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT ... See More ⇒
7.1. Size:167K ixys
ixta64n10l2 ixth64n10l2 ixtp64n10l2.pdf 
Advance Technical Information LinearL2TM Power VDSS = 100V IXTA64N10L2 MOSFETs w/Extended ID25 = 64A IXTP64N10L2 RDS(on) 32m FBSOA IXTH64N10L2 N-Channel Enhancement Mode TO-263AA (IXTA) Guaranteed FBSOA Avalanche Rated G S D (Tab) TO-220AB (IXTP) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 100 V VDGR TJ = 25 C... See More ⇒
9.1. Size:128K ixys
ixth68n20 ixtk74n20.pdf 
VDSS ID25 RDS(on) High Current IXTK 74 N20 200 V 74 A 35 mW MegaMOSTMFET IXTH 68 N20 200 V 68 A 35 mW N-Channel Enhancement Mode Preliminary data Symbol Test conditions Maximum ratings TO-247AD (IXTH) VDSS TJ = 25 C to 150 C 200 V VDGR TJ = 25 C to 150 C; RGS = 1.0 M 200 V D (TAB) VGS Continuous 20 V VGSM Transient 30 V ID25 TC = 25 C 74N20 74 A 68N20 68 A TO-264 AA (I... See More ⇒
9.2. Size:206K ixys
ixta6n50d2 ixtp6n50d2 ixth6n50d2.pdf 
Preliminary Technical Information Depletion Mode VDSX = 500V IXTA6N50D2 MOSFET ID(on) > 6A IXTP6N50D2 RDS(on) 500m IXTH6N50D2 N-Channel TO-263 AA (IXTA) G S D (Tab) Symbol Test Conditions Maximum Ratings TO-220AB (IXTP) VDSX TJ = 25 C to 150 C 500 V VGSX Continuous 20 V VGSM Transient 30 V PD TC = 25 C 300 W G D D (Tab) TJ - 55 .... See More ⇒
9.3. Size:579K ixys
ixth67n10 ixtm67n10 ixth75n10 ixtm75n10 ixtt75n10.pdf 
VDSS ID25 RDS(on) MegaMOSTMFET IXTH / IXTM 67N10 100 V 67 A 25 m IXTH / IXTM 75N10 100 V 75 A 20 m IXTT 75N10 N-Channel Enhancement Mode TO-247 AD (IXTH) Symbol Test Conditions Maximum Ratings (TAB) VDSS TJ = 25 C to 150 C 100 V VDGR TJ = 25 C to 150 C; RGS = 1 M 100 V TO-204 AE (IXTM) VGS Continuous 20 V VGSM Transient 30 ... See More ⇒
9.4. Size:113K ixys
ixth62n65x2.pdf 
Advance Technical Information X2-Class VDSS = 650V IXTH62N65X2 Power MOSFET ID25 = 62A RDS(on) 52m N-Channel Enhancement Mode Avalanche Rated TO-247 G D Symbol Test Conditions Maximum Ratings S D (Tab) VDSS TJ = 25 C to 150 C 650 V G = Gate D = Drain VDGR TJ = 25 C to 150 C, RGS = 1M 650 V S = Source Tab = Drain VGSS Continu... See More ⇒
9.5. Size:149K ixys
ixtt60n20l2-ixtq60n20l2-ixth60n20l2.pdf 
Advance Technical Information Linear L2TM Power VDSS = 200V IXTT60N20L2 MOSFET w/ Extended ID25 = 60A IXTQ60N20L2 RDS(on) 45m FBSOA IXTH60N20L2 TO-268 (IXTT) N-Channel Enhancement Mode Avalanche Rated G S Tab Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 200 V TO-3P (IXTQ) VDGR TJ = 25 C to 150 C, RGS = 1M 200 V VGSS... See More ⇒
9.6. Size:104K ixys
ixth6n90-a ixtm6n90-a.pdf 
VDSS ID25 RDS(on) Standard IXTH / IXTM 6N90 900 V 6 A 1.8 Power MOSFET IXTH / IXTM 6N90A 900 V 6 A 1.4 N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings TO-247 AD (IXTH) VDSS TJ = 25 C to 150 C 900 V VDGR TJ = 25 C to 150 C; RGS = 1 M 900 V D (TAB) VGS Continuous 20 V VGSM Transient 30 V ID25 TC = 25 C6 A T... See More ⇒
9.7. Size:588K ixys
ixth6n120 ixtt6n120.pdf 
IXTH 6N120 VDSS = 1200 V High Voltage IXTT 6N120 ID25 = 6 A Power MOSFET RDS(on) = 2.6 N-Channel Enhancement Mode Avalanche Rated Preliminary Data Sheet TO-247 AD (IXTH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 1200 V VDGR TJ = 25 C to 150 C; RGS = 1 M 1200 V VGS Continuous 20 V (TAB) VGSM Transient 30 V ID25 TC = 25 C6 A... See More ⇒
9.8. Size:116K ixys
ixth6n150.pdf 
Advance Technical Information High Voltage VDSS = 1500V IXTH6N150 ID25 = 6A Power MOSFET RDS(on) 3.5 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 1500 V VDGR TJ = 25 C to 150 C, RGS = 1M 1500 V G D Tab VGSS Continuous 20 V S VGSM Transient 30... See More ⇒
9.9. Size:102K ixys
ixth6n80-a ixtm6n80-a.pdf 
VDSS ID25 RDS(on) Standard IXTH / IXTM 6N80 800 V 6 A 1.8 Power MOSFET IXTH / IXTM 6N80A 800 V 6 A 1.4 N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings TO-247 AD (IXTH) VDSS TJ = 25 C to 150 C 800 V VDGR TJ = 25 C to 150 C; RGS = 1 M 800 V VGS Continuous 20 V D (TAB) VGSM Transient 30 V ID25 TC = 25 C6 A TO... See More ⇒
9.10. Size:184K ixys
ixta6n100d2-ixtp6n100d2-ixth6n100d2.pdf 
Preliminary Technical Information Depletion Mode VDSX = 1000V IXTA6N100D2 MOSFET ID(on) > 6A IXTP6N100D2 RDS(on) 2.2 IXTH6N100D2 N-Channel TO-263 AA (IXTA) G S D (Tab) Symbol Test Conditions Maximum Ratings TO-220AB (IXTP) VDSX TJ = 25 C to 150 C 1000 V VGSX Continuous 20 V VGSM Transient 30 V PD TC = 25 C 300 W G D D (Tab) TJ - ... See More ⇒
9.11. Size:211K inchange semiconductor
ixth60n20l2.pdf 
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IXTH60N20L2 FEATURES With TO-247 packaging High speed switching Very high commutation ruggedness Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS PFC stages Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25... See More ⇒
9.12. Size:260K inchange semiconductor
ixth60n15.pdf 
isc N-Channel MOSFET Transistor IXTH60N15 FEATURES With TO-247 packaging With low gate drive requirements Easy to drive 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 150 V DSS V Gat... See More ⇒
Detailed specifications: IXTJ6N150, IXTJ4N150, IXTJ3N150, IXTI76N25T, IXTI12N50P, IXTI10N60P, IXTH80N65X2, IXTH80N075L2, AOD4184A, IXTH64N10L2, IXTH62N65X2, IXTH52N65X, IXTH4N100L, IXTH48N65X2, IXTH48N15, IXTH3N200P3HV, IXTH34N65X2
Keywords - IXTH64N65X MOSFET specs
IXTH64N65X cross reference
IXTH64N65X equivalent finder
IXTH64N65X pdf lookup
IXTH64N65X substitution
IXTH64N65X replacement
Can't find your MOSFET?
Learn how to find a substitute transistor by analyzing voltage, current and package compatibility