IXTH1N170DHV MOSFET Datasheet: N-Ch, 1700V, 1A. Full specification with pinout and replacement list

IXTH1N170DHV Specs and Replacement

   Type Designator: IXTH1N170DHV
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 290 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1700 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 38 nS
   Cossⓘ - Output Capacitance: 95 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 16 Ohm
   Package: TO-247HV

IXTH1N170DHV substitution

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IXTH1N170DHV datasheet

..1. Size:238K ixys
ixta1n170dhv ixth1n170dhv.pdf pdf_icon

Advance Technical Information Depletion Mode VDSX = 1700V IXTA1N170DHV MOSFET ID(on) > 1A IXTH1N170DHV RDS(on) 16 N-Channel TO-263HV (IXTA) G S D (Tab) TO-247HV (IXTH) Symbol Test Conditions Maximum Ratings VDSX TJ = 25 C to 150 C 1700 V VDGX TJ = 25 C to 150 C, RGS = 1M 1700 V VGSX Continuous 20 V VGSM Transient 30 V ... See More ⇒

7.1. Size:73K ixys
ixth1n100 ixtt1n100.pdf pdf_icon

Advance Technical Information VDSS = 1000 V IXTH 1N100 High Voltage MOSFET ID25 = 1.5 A IXTT 1N100 RDS(on) = 11 N-Channel Enhancement Mode Avalanche Energy Rated Symbol Test Conditions Maximum Ratings TO-247 AD (IXTH) VDSS TJ = 25 C to 150 C 1000 V VDGR TJ = 25 C to 150 C; RGS = 1 M 1000 V VGS Continuous 20 V D (TAB) VGSM Transient 30 V ID25 TC ... See More ⇒

8.1. Size:206K ixys
ixth1n450hv.pdf pdf_icon

High Voltage VDSS = 4500V IXTT1N450HV Power MOSFET ID25 = 1A IXTH1N450HV RDS(on) 80 N-Channel Enhancement Mode TO-268HV (IXTT) G S D (Tab) Symbol Test Conditions Maximum Ratings TO-247HV (IXTH) VDSS TJ = 25 C to 150 C 4500 V VDGR TJ = 25 C to 150 C, RGS = 1M 4500 V VGSS Continuous 20 V VGSM Transient 30 ... See More ⇒

8.2. Size:252K ixys
ixta1n200p3hv ixth1n200p3 ixth1n200p3hv.pdf pdf_icon

Preliminary Technical Information High Voltage VDSS = 2000V IXTA1N200P3HV Power MOSFET ID25 = 1.0A IXTH1N200P3HV RDS(on) 40 IXTH1N200P3 N-Channel Enhancement Mode TO-263HV (IXTA) G S D (Tab) Symbol Test Conditions Maximum Ratings TO-247HV (IXTH) VDSS TJ = 25 C to 150 C 2000 V VDGR TJ = 25 C to 150 C, RGS = 1M ... See More ⇒