All MOSFET. IXTH1N170DHV Datasheet

 

IXTH1N170DHV MOSFET. Datasheet pdf. Equivalent


   Type Designator: IXTH1N170DHV
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 290 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1700 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 1 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 47 nC
   trⓘ - Rise Time: 38 nS
   Cossⓘ - Output Capacitance: 95 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 16 Ohm
   Package: TO-247HV

 IXTH1N170DHV Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IXTH1N170DHV Datasheet (PDF)

 ..1. Size:238K  ixys
 ixta1n170dhv ixth1n170dhv.pdf

IXTH1N170DHV IXTH1N170DHV

Advance Technical InformationDepletion Mode VDSX = 1700VIXTA1N170DHVMOSFET ID(on) > 1AIXTH1N170DHV RDS(on) 16 N-ChannelTO-263HV (IXTA)GS D (Tab)TO-247HV (IXTH)Symbol Test Conditions Maximum RatingsVDSX TJ = 25C to 150C 1700 VVDGX TJ = 25C to 150C, RGS = 1M 1700 VVGSX Continuous 20 VVGSM Transient 30 V

 7.1. Size:73K  ixys
 ixth1n100 ixtt1n100.pdf

IXTH1N170DHV IXTH1N170DHV

Advance Technical InformationVDSS = 1000 VIXTH 1N100High Voltage MOSFETID25 = 1.5 AIXTT 1N100 RDS(on) = 11 N-Channel Enhancement ModeAvalanche Energy RatedSymbol Test Conditions Maximum Ratings TO-247 AD (IXTH)VDSS TJ = 25C to 150C 1000 VVDGR TJ = 25C to 150C; RGS = 1 M 1000 VVGS Continuous 20 V D (TAB)VGSM Transient 30 VID25 TC

 8.1. Size:206K  ixys
 ixth1n450hv.pdf

IXTH1N170DHV IXTH1N170DHV

High Voltage VDSS = 4500VIXTT1N450HVPower MOSFETID25 = 1AIXTH1N450HV RDS(on) 80 N-Channel Enhancement ModeTO-268HV (IXTT)GS D (Tab)Symbol Test Conditions Maximum RatingsTO-247HV (IXTH)VDSS TJ = 25C to 150C 4500 VVDGR TJ = 25C to 150C, RGS = 1M 4500 VVGSS Continuous 20 VVGSM Transient 30

 8.2. Size:252K  ixys
 ixta1n200p3hv ixth1n200p3 ixth1n200p3hv.pdf

IXTH1N170DHV IXTH1N170DHV

Preliminary Technical InformationHigh Voltage VDSS = 2000VIXTA1N200P3HVPower MOSFETID25 = 1.0AIXTH1N200P3HV RDS(on) 40 IXTH1N200P3N-Channel Enhancement ModeTO-263HV (IXTA)GS D (Tab)Symbol Test Conditions Maximum RatingsTO-247HV (IXTH)VDSS TJ = 25C to 150C 2000 VVDGR TJ = 25C to 150C, RGS = 1M

 8.3. Size:208K  ixys
 ixth1n300p3hv ixtt1n300p3hv.pdf

IXTH1N170DHV IXTH1N170DHV

Preliminary Technical InformationHigh Voltage VDSS = 3000VIXTT1N300P3HVPower MOSFETID25 = 1.00AIXTH1N300P3HV RDS(on) 50 N-Channel Enhancement ModeTO-268HV (IXTT)GS D (Tab)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 3000 VTO-247HV (IXTH)VDGR TJ = 25C to 150C, RGS = 1M 3000 VVGSS

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
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