All MOSFET. IXTH12N50 Datasheet

 

IXTH12N50 Datasheet and Replacement


   Type Designator: IXTH12N50
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 180 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 12 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 290 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.5 Ohm
   Package: TO-247
 

 IXTH12N50 substitution

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IXTH12N50 Datasheet (PDF)

 0.2. Size:62K  ixys
ixth12n50a ixtm12n50a.pdf pdf_icon

IXTH12N50

VDSS ID25 RDS(on)StandardIXTH 12 N50A 500 V 12 A 0.4 Power MOSFETIXTM 12 N50A 500 V 12 A 0.4 N-Channel Enhancement ModeSymbol Test Conditions Maximum Ratings TO-247 AD (IXTH)VDSS TJ = 25C to 150C 500 VVDGR TJ = 25C to 150C; RGS = 1 M 500 VD (TAB)VGS Continuous 20 VVGSM Transient 30 VID25 TC = 25C12 AIDM TC

 7.1. Size:175K  ixys
ixtt12n150 ixth12n150.pdf pdf_icon

IXTH12N50

High Voltage VDSS = 1500VIXTT12N150ID25 = 12APower MOSFETIXTH12N150 RDS(on) 2.2 N-Channel Enhancement ModeAvalanche RatedFast Intrinsic DiodeTO-268 (IXTT)GSymbol Test Conditions Maximum RatingsSVDSS TJ = 25C to 150C 1500 VD (Tab)VDGR TJ = 25C to 150C, RGS = 1M 1500 VVGSS Continuous 30 VTO-247 (IXTH)VG

Datasheet: IXTH1N200P3HV , IXTH1N200P3 , IXTH1N170DHV , IXTH15N70 , IXTH15N50A , IXTH15N45A , IXTH140P10T , IXTH12N65X2 , IRF9540 , IXTH12N45A , IXTH12N45 , IXTH12N150 , IXTH10N60A , IXTH10N60 , IXTH06N220P3HV , IXTH05N250P3HV , IXTH04N300P3HV .

History: SSM3J16FU | BLP04N10-P | SM140R50CT1TL | AP60SL650AFI | NVMFS5C410N | 2SK4213-ZK | DHB16N06

Keywords - IXTH12N50 MOSFET datasheet

 IXTH12N50 cross reference
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