IXTH12N150 Specs and Replacement

Type Designator: IXTH12N150

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 890 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 1500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 12 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 16 nS

Cossⓘ - Output Capacitance: 240 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm

Package: TO-247

IXTH12N150 substitution

- MOSFET ⓘ Cross-Reference Search

 

IXTH12N150 datasheet

 ..1. Size:175K  ixys
ixtt12n150 ixth12n150.pdf pdf_icon

IXTH12N150

High Voltage VDSS = 1500V IXTT12N150 ID25 = 12A Power MOSFET IXTH12N150 RDS(on) 2.2 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-268 (IXTT) G Symbol Test Conditions Maximum Ratings S VDSS TJ = 25 C to 150 C 1500 V D (Tab) VDGR TJ = 25 C to 150 C, RGS = 1M 1500 V VGSS Continuous 30 V TO-247 (IXTH) VG... See More ⇒

 ..2. Size:122K  ixys
ixth12n150 ixtt12n150.pdf pdf_icon

IXTH12N150

High Voltage VDSS = 1500V IXTT12N150 ID25 = 12A Power MOSFETs IXTH12N150 RDS(on) 2 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-268 (IXTT) G Symbol Test Conditions Maximum Ratings S VDSS TJ = 25 C to 150 C 1500 V D (Tab) VDGR TJ = 25 C to 150 C, RGS = 1M 1500 V VGSS Continuous 30 V TO-247 (IXTH) VGSM Transient... See More ⇒

 6.1. Size:105K  ixys
ixth10n100 ixtm10n100 ixth12n100 ixtm12n100.pdf pdf_icon

IXTH12N150

VDSS ID25 RDS(on) MegaMOSTMFET IXTH / IXTM 10N100 1000 V 10 A 1.20 IXTH / IXTM 12N100 1000 V 12 A 1.05 N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings TO-247 AD (IXTH) VDSS TJ = 25 C to 150 C 1000 V VDGR TJ = 25 C to 150 C; RGS = 1 M 1000 V VGS Continuous 20 V D (TAB) VGSM Transient 30 V ID25 TC = 25 C 10N... See More ⇒

 6.2. Size:545K  ixys
ixth12n120.pdf pdf_icon

IXTH12N150

VDSS = 1200 V IXTH 12N120 ID (cont) = 12 A Power MOSFET, Avalanche Rated RDS(on)= 1.4 High Voltage Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-247 AD VDSS TJ = 25 C to 150 C 1200 V VDGR TJ = 25 C to 150 C; RGS = 1 M 1200 V VGS Continuous 30 V D (TAB) VGSM Transient 40 V ID25 TC = 25 C12 A IDM TC = 25 C, pulse width limit... See More ⇒

Detailed specifications: IXTH15N70, IXTH15N50A, IXTH15N45A, IXTH140P10T, IXTH12N65X2, IXTH12N50, IXTH12N45A, IXTH12N45, 7N65, IXTH10N60A, IXTH10N60, IXTH06N220P3HV, IXTH05N250P3HV, IXTH04N300P3HV, IXTH02N450HV, IXTF1N450, IXTF02N450

Keywords - IXTH12N150 MOSFET specs

 IXTH12N150 cross reference

 IXTH12N150 equivalent finder

 IXTH12N150 pdf lookup

 IXTH12N150 substitution

 IXTH12N150 replacement

Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs