All MOSFET. IXTH10N60A Datasheet

 

IXTH10N60A Datasheet and Replacement


   Type Designator: IXTH10N60A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 180 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 270 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.55 Ohm
   Package: TO-247
 

 IXTH10N60A substitution

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IXTH10N60A Datasheet (PDF)

 7.1. Size:105K  ixys
ixth10n100 ixtm10n100 ixth12n100 ixtm12n100.pdf pdf_icon

IXTH10N60A

VDSS ID25 RDS(on)MegaMOSTMFET IXTH / IXTM 10N100 1000 V 10 A 1.20 IXTH / IXTM 12N100 1000 V 12 A 1.05 N-Channel Enhancement ModeSymbol Test Conditions Maximum Ratings TO-247 AD (IXTH)VDSS TJ = 25C to 150C 1000 VVDGR TJ = 25C to 150C; RGS = 1 M 1000 VVGS Continuous 20 V D (TAB)VGSM Transient 30 VID25 TC = 25C 10N

 8.1. Size:124K  ixys
ixth10p50 ixtt10p50 ixth11p50 ixtt11p50.pdf pdf_icon

IXTH10N60A

VDSS ID25 RDS(on)Standard Power MOSFETP-Channel Enhancement ModeIXTH/IXTT 10P50 -500 V -10 A 0.90 Avalanche RatedIXTH/IXTT 11P50 -500 V -11 A 0.75 TO-247 AD (IXTH)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C -500 VVDGR TJ = 25C to 150C; RGS = 1 M -500 VVGS Continuous 20 V(TAB)VGSM Transient 30 VDID25 TC = 25C 10P50 -10 A11P50 -

Datasheet: IXTH15N50A , IXTH15N45A , IXTH140P10T , IXTH12N65X2 , IXTH12N50 , IXTH12N45A , IXTH12N45 , IXTH12N150 , AON7408 , IXTH10N60 , IXTH06N220P3HV , IXTH05N250P3HV , IXTH04N300P3HV , IXTH02N450HV , IXTF1N450 , IXTF02N450 , IXTA8N65X2 .

Keywords - IXTH10N60A MOSFET datasheet

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