IXTH10N60A Specs and Replacement
Type Designator: IXTH10N60A
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 180 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 25 nS
Cossⓘ - Output Capacitance: 270 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.55 Ohm
Package: TO-247
IXTH10N60A substitution
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IXTH10N60A datasheet
ixth10n100 ixtm10n100 ixth12n100 ixtm12n100.pdf
VDSS ID25 RDS(on) MegaMOSTMFET IXTH / IXTM 10N100 1000 V 10 A 1.20 IXTH / IXTM 12N100 1000 V 12 A 1.05 N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings TO-247 AD (IXTH) VDSS TJ = 25 C to 150 C 1000 V VDGR TJ = 25 C to 150 C; RGS = 1 M 1000 V VGS Continuous 20 V D (TAB) VGSM Transient 30 V ID25 TC = 25 C 10N... See More ⇒
ixth10p50 ixtt10p50 ixth11p50 ixtt11p50.pdf
VDSS ID25 RDS(on) Standard Power MOSFET P-Channel Enhancement Mode IXTH/IXTT 10P50 -500 V -10 A 0.90 Avalanche Rated IXTH/IXTT 11P50 -500 V -11 A 0.75 TO-247 AD (IXTH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C -500 V VDGR TJ = 25 C to 150 C; RGS = 1 M -500 V VGS Continuous 20 V (TAB) VGSM Transient 30 V D ID25 TC = 25 C 10P50 -10 A 11P50 -... See More ⇒
Detailed specifications: IXTH15N50A, IXTH15N45A, IXTH140P10T, IXTH12N65X2, IXTH12N50, IXTH12N45A, IXTH12N45, IXTH12N150, IRFP250N, IXTH10N60, IXTH06N220P3HV, IXTH05N250P3HV, IXTH04N300P3HV, IXTH02N450HV, IXTF1N450, IXTF02N450, IXTA8N65X2
Keywords - IXTH10N60A MOSFET specs
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