IXTA64N10L2 MOSFET. Datasheet pdf. Equivalent
Type Designator: IXTA64N10L2
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 357 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
|Id|ⓘ - Maximum Drain Current: 64 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 100 nC
trⓘ - Rise Time: 27 nS
Cossⓘ - Output Capacitance: 720 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.032 Ohm
Package: TO-263AA
IXTA64N10L2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IXTA64N10L2 Datasheet (PDF)
ixta64n10l2 ixth64n10l2 ixtp64n10l2.pdf
Advance Technical InformationLinearL2TM Power VDSS = 100VIXTA64N10L2MOSFETs w/Extended ID25 = 64AIXTP64N10L2 RDS(on) 32m FBSOAIXTH64N10L2N-Channel Enhancement ModeTO-263AA (IXTA)Guaranteed FBSOAAvalanche RatedGSD (Tab)TO-220AB (IXTP)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 100 VVDGR TJ = 25C
ixta62n15p ixtp62n15p ixtq62n15p.pdf
IXTA 62N15P VDSS = 150 VPolarHTTMIXTP 62N15P ID25 = 62 APower MOSFETIXTQ 62N15P RDS(on) 40 m N-Channel Enhancement ModeAvalanche RatedTO-263 (IXTA)Symbol Test Conditions Maximum RatingsVDSS TJ = 25 C to 175 C 150 VGSVDGR TJ = 25 C to 175 C; RGS = 1 M 150 V(TAB)VGS Continuous 20 VVGSM Transient 30 VTO-220 (I
ixta6n50d2 ixtp6n50d2 ixth6n50d2.pdf
Preliminary Technical InformationDepletion Mode VDSX = 500VIXTA6N50D2MOSFET ID(on) > 6AIXTP6N50D2 RDS(on) 500m IXTH6N50D2N-ChannelTO-263 AA (IXTA)GSD (Tab)Symbol Test Conditions Maximum RatingsTO-220AB (IXTP)VDSX TJ = 25C to 150C 500 VVGSX Continuous 20 VVGSM Transient 30 VPD TC = 25C 300 WGDD (Tab)TJ - 55 .
ixta6n50p ixtp6n50p.pdf
VDSS = 500 VIXTA 6N50PPolarHVTMID25 = 6 AIXTP 6N50PPower MOSFET RDS(on) 1.1 N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-263 (IXTA)VDSS TJ = 25 C to 150 C 500 VVDGR TJ = 25 C to 150 C; RGS = 1 M 500 VVGSS Continuous 30 VGSVGSM Transient 40 V(TAB)ID25 TC = 25 C6 A
ixta60n10t ixtp60n10t.pdf
TrenchTM VDSS = 100VIXTA60N10TID25 = 60APower MOSFETIXTP60N10T RDS(on) 18m N-Channel Enhancement ModeTO-263Avalanche Rated(IXTA)GSD (Tab)Symbol Test Conditions Maximum RatingsTO-220VDSS TJ = 25C to 175C 100 V(IXTP)VDGR TJ = 25C to 175C, RGS = 1M 100 VVGSS Continuous 20 VVGSM Transient 30 VG
ixta60n20t ixtp60n20t ixtq60n20t.pdf
TrenchTM VDSS = 200VIXTA60N20TPower MOSFET ID25 = 60AIXTP60N20T RDS(on) 40m IXTQ60N20TTO-263 AA (IXTA)N-Channel Enhancement ModeFor PDP DriversGAvalanche RatedSD (Tab)TO-220AB (IXTP)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 175C 200 VVDGR TJ = 25C to 175C, RGS = 1M 200 VGVGSS Continuous 20 VDD (
ixta6n100d2-ixtp6n100d2-ixth6n100d2.pdf
Preliminary Technical InformationDepletion Mode VDSX = 1000VIXTA6N100D2MOSFET ID(on) > 6AIXTP6N100D2 RDS(on) 2.2 IXTH6N100D2N-ChannelTO-263 AA (IXTA)GSD (Tab)Symbol Test Conditions Maximum RatingsTO-220AB (IXTP)VDSX TJ = 25C to 150C 1000 VVGSX Continuous 20 VVGSM Transient 30 VPD TC = 25C 300 WGDD (Tab)TJ -
ixta60n10t.pdf
INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IXTA60N10TFEATURESWith TO-263(D2PAK) packagingLow gate chargeHigh speed switchingLow on-resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNI
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
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