IXTA4N65X2 Specs and Replacement

Type Designator: IXTA4N65X2

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 80 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 28 nS

Cossⓘ - Output Capacitance: 294 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.85 Ohm

Package: TO-263

IXTA4N65X2 substitution

- MOSFET ⓘ Cross-Reference Search

 

IXTA4N65X2 datasheet

 ..1. Size:238K  ixys
ixta4n65x2 ixtp4n65x2 ixty4n65x2.pdf pdf_icon

IXTA4N65X2

Preliminary Technical Information X2-Class VDSS = 650V IXTY4N65X2 Power MOSFET ID25 = 4A IXTA4N65X2 RDS(on) 850m IXTP4N65X2 N-Channel Enhancement Mode TO-252 (IXTY) G S Symbol Test Conditions Maximum Ratings D (Tab) VDSS TJ = 25 C to 150 C 650 V TO-263 (IXTA) VDGR TJ = 25 C to 150 C, RGS = 1M 650 V VGSS Continuous 30 V G ... See More ⇒

 ..2. Size:313K  ixys
ixty4n65x2 ixta4n65x2 ixtp4n65x2.pdf pdf_icon

IXTA4N65X2

X2-Class VDSS = 650V IXTY4N65X2 Power MOSFET ID25 = 4A IXTA4N65X2 RDS(on) 850m IXTP4N65X2 N-Channel Enhancement Mode TO-252 (IXTY) G S Symbol Test Conditions Maximum Ratings D (Tab) VDSS TJ = 25 C to 150 C 650 V TO-263 (IXTA) VDGR TJ = 25 C to 150 C, RGS = 1M 650 V VGSS Continuous 30 V G VGSM Transient 40 V S ID25 TC... See More ⇒

 7.1. Size:141K  ixys
ixta4n60p ixtp4n60p ixtu4n60p ixty4n60p.pdf pdf_icon

IXTA4N65X2

IXTA4N60P VDSS = 600 V PolarHVTM IXTP4N60P ID25 = 4 A Power MOSFET IXTU4N60P RDS(on) 2.0 N-Channel Enhancement Mode IXTY4N60P Avalanche Rated TO-263 (IXTA) G S Symbol Test Conditions Maximum Ratings (TAB) VDSS TJ = 25 C to 150 C 600 V VDGR TJ = 25 C to 150 C; RGS = 1 M 600 V TO-220 (IXTP) VGSS Continuous 30 V VGSM Transient 40 V ... See More ⇒

 8.1. Size:196K  ixys
ixta4n150hv.pdf pdf_icon

IXTA4N65X2

Preliminary Technical Information High Voltage VDSS = 1500V IXTA4N150HV ID25 = 4A Power MOSFETs IXTT4N150HV RDS(on) 6 N-Channel Enhancement Mode Fast Intrinsic Diode TO-263 Symbol Test Conditions Maximum Ratings G VDSS TJ = 25 C to 150 C 1500 V S VDGR TJ = 25 C to 150 C, RGS = 1M 1500 V D (Tab) VGSS Continuous 30 V VGSM Transient ... See More ⇒

Detailed specifications: IXTH05N250P3HV, IXTH04N300P3HV, IXTH02N450HV, IXTF1N450, IXTF02N450, IXTA8N65X2, IXTA80N075L2, IXTA64N10L2, K3569, IXTA4N150HV, IXTA3N150HV, IXTA3N120TRL, IXTA3N120HV, IXTA3N100D2HV, IXTA270N04T4, IXTA20N65X, IXTA1N200P3HV

Keywords - IXTA4N65X2 MOSFET specs

 IXTA4N65X2 cross reference

 IXTA4N65X2 equivalent finder

 IXTA4N65X2 pdf lookup

 IXTA4N65X2 substitution

 IXTA4N65X2 replacement

Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs