All MOSFET. IXTA02N450HV Datasheet

 

IXTA02N450HV MOSFET. Datasheet pdf. Equivalent


   Type Designator: IXTA02N450HV
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 113 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 4500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 6.5 V
   |Id|ⓘ - Maximum Drain Current: 0.2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 10.4 nC
   trⓘ - Rise Time: 48 nS
   Cossⓘ - Output Capacitance: 19 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 750 Ohm
   Package: TO-263

 IXTA02N450HV Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IXTA02N450HV Datasheet (PDF)

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