IXFY4N60P3 Datasheet. Specs and Replacement

Type Designator: IXFY4N60P3

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 114 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 24 nS

Cossⓘ - Output Capacitance: 46 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.2 Ohm

Package: TO-252

IXFY4N60P3 substitution

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IXFY4N60P3 datasheet

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IXFY4N60P3

Advance Technical Information Polar3 TM HiPerFETTM VDSS = 600V IXFY4N60P3 Power MOSFETs ID25 = 4A IXFA4N60P3 RDS(on) 2.2 IXFP4N60P3 N-Channel Enhancement Mode Avalanche Rated TO-252 (IXFY) Fast Intrinsic Rectifier G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 600 V TO-263 AA (IXFA) VDGR TJ = 25 C to 150 C, RG... See More ⇒

Detailed specifications: IXTA05N100HV, IXTA02N450HV, IXTA02N250HV, IXTA02N250, IXKP35N60C5, IXKG25N80C, IXFY9130, IXFY5N50P3, IRFP250, IXFX90N60X, IXFX44N55Q, IXFX32N90P, IXFX30N50Q, IXFX260N17T, IXFX24N100Q3, IXFX210N17T, IXFX150N30P3

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.