All MOSFET. IXFY4N60P3 Datasheet

 

IXFY4N60P3 Datasheet and Replacement


   Type Designator: IXFY4N60P3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 114 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 24 nS
   Cossⓘ - Output Capacitance: 46 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.2 Ohm
   Package: TO-252
 

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IXFY4N60P3 Datasheet (PDF)

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IXFY4N60P3

Advance Technical InformationPolar3 TM HiPerFETTM VDSS = 600VIXFY4N60P3Power MOSFETs ID25 = 4AIXFA4N60P3 RDS(on) 2.2 IXFP4N60P3N-Channel Enhancement ModeAvalanche RatedTO-252 (IXFY)Fast Intrinsic RectifierGSD (Tab)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 600 V TO-263 AA (IXFA)VDGR TJ = 25C to 150C, RG

Datasheet: IXTA05N100HV , IXTA02N450HV , IXTA02N250HV , IXTA02N250 , IXKP35N60C5 , IXKG25N80C , IXFY9130 , IXFY5N50P3 , IRFP250 , IXFX90N60X , IXFX44N55Q , IXFX32N90P , IXFX30N50Q , IXFX260N17T , IXFX24N100Q3 , IXFX210N17T , IXFX150N30P3 .

History: SIB914DK

Keywords - IXFY4N60P3 MOSFET datasheet

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