All MOSFET. IRFP255 Datasheet

 

IRFP255 MOSFET. Datasheet pdf. Equivalent


   Type Designator: IRFP255
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Maximum Power Dissipation (Pd): 150 W
   Maximum Drain-Source Voltage |Vds|: 250 V
   Maximum Gate-Source Voltage |Vgs|: 20 V
   Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
   Maximum Drain Current |Id|: 20 A
   Maximum Junction Temperature (Tj): 150 °C
   Total Gate Charge (Qg): 87 nC
   Rise Time (tr): 84 nS
   Drain-Source Capacitance (Cd): 580 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.17 Ohm
   Package: TO247

 IRFP255 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRFP255 Datasheet (PDF)

 ..1. Size:192K  international rectifier
irfp254 irfp255 irfp256 irfp257.pdf

IRFP255 IRFP255

 ..2. Size:236K  inchange semiconductor
irfp255.pdf

IRFP255 IRFP255

isc N-Channel MOSFET Transistor IRFP255FEATURESDrain Current I = 21A@ T =25D CDrain Source Voltage-: V = 250V(Min)DSSStatic Drain-Source On-Resistance: R = 0.17(Max)DS(on)Fast Switching100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies

 8.1. Size:1950K  international rectifier
irfp254pbf.pdf

IRFP255 IRFP255

PD - 95009IRFP254PbF Lead-Free2/12/04Document Number: 91214 www.vishay.com1IRFP254PbFDocument Number: 91214 www.vishay.com2IRFP254PbFDocument Number: 91214 www.vishay.com3IRFP254PbFDocument Number: 91214 www.vishay.com4IRFP254PbFDocument Number: 91214 www.vishay.com5IRFP254PbFDocument Number: 91214 www.vishay.com6IRFP254PbFTO-247AC Package Ou

 8.2. Size:501K  international rectifier
irfp250 irfp251 irfp252 irfp253.pdf

IRFP255 IRFP255

 8.3. Size:180K  international rectifier
irfp250npbf.pdf

IRFP255 IRFP255

PD - 95007AIRFP250NPbFHEXFET Power MOSFETl Advanced Process Technologyl Dynamic dv/dt RatingDVDSS = 200Vl 175C Operating Temperaturel Fast Switchingl Fully Avalanche RatedRDS(on) = 0.075Gl Ease of Parallelingl Simple Drive RequirementsID = 30Al Lead-Free SDescriptionFifth Generation HEXFETs from International Rectifier utilize advanced processingtechni

 8.4. Size:164K  international rectifier
irfp250.pdf

IRFP255 IRFP255

 8.5. Size:122K  international rectifier
irfp250n.pdf

IRFP255 IRFP255

PD - 94008IRFP250NHEXFET Power MOSFET Advanced Process TechnologyDVDSS = 200V Dynamic dv/dt Rating 175C Operating Temperature Fast SwitchingRDS(on) = 0.075G Fully Avalanche Rated Ease of ParallelingID = 30AS Simple Drive RequirementsDescriptionFifth Generation HEXFETs from International Rectifier utilize advanced processingtechniques to achieve extreme

 8.6. Size:162K  international rectifier
irfp254.pdf

IRFP255 IRFP255

 8.7. Size:222K  international rectifier
irfp254n.pdf

IRFP255 IRFP255

PD - 94213IRFP254NHEXFET Power MOSFET Advanced Process TechnologyD Dynamic dv/dt Rating VDSS = 250V 175C Operating Temperature Fast SwitchingRDS(on) = 125m Fully Avalanche Rated G Ease of ParallelingID = 23A Simple Drive RequirementsSDescriptionFifth Generation HEXFETs from International Rectifier utilize advanced processingtechniques to achieve extremely

 8.8. Size:636K  international rectifier
irfp250mpbf.pdf

IRFP255 IRFP255

PD - 96292IRFP250MPbFHEXFET Power MOSFETl Advanced Process Technologyl Dynamic dv/dt RatingDVDSS = 200Vl 175C Operating Temperaturel Fast Switchingl Fully Avalanche RatedRDS(on) = 0.075Gl Ease of Parallelingl Simple Drive RequirementsID = 30Al Lead-Free SDescriptionFifth Generation HEXFETs from International Rectifier utilize advanced processingtechniq

 8.9. Size:3344K  international rectifier
irfp250pbf.pdf

IRFP255 IRFP255

PD - 95008IRFP250PbF Lead-Freewww.irf.com 12/11/04IRFP250PbF2 www.irf.comIRFP250PbFwww.irf.com 3IRFP250PbF4 www.irf.comIRFP250PbFwww.irf.com 5IRFP250PbF6 www.irf.comIRFP250PbFTO-247AC Package OutlineDimensions are shown in millimeters (inches)- D -3.65 (.143)5.30 (.209)15.90 (.626) 3.55 (.140)4.70 (.185)15.30 (.602)0.25 (.010) M D B M2.

 8.10. Size:189K  international rectifier
irfp254npbf.pdf

IRFP255 IRFP255

PD - 95041IRFP254NPbFHEXFET Power MOSFETl Advanced Process TechnologyDl Dynamic dv/dt Rating VDSS = 250Vl 175C Operating Temperaturel Fast SwitchingRDS(on) = 125ml Fully Avalanche Rated Gl Ease of ParallelingID = 23Al Simple Drive RequirementsSl Lead-FreeDescriptionFifth Generation HEXFETs from International Rectifier utilize advanced processingtechniques

 8.11. Size:271K  st
irfp250.pdf

IRFP255 IRFP255

IRFP250N-CHANNEL 200V - 0.073 - 33A TO-247PowerMeshII MOSFETTYPE VDSS RDS(on) IDIRFP250 200V

 8.12. Size:670K  fairchild semi
irfp254b.pdf

IRFP255 IRFP255

November 2001IRFP254B250V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 25A, 250V, RDS(on) = 0.14 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 95 nC)planar, DMOS technology. Low Crss ( typical 60 pF)This advanced technology has been especially tailored to Fast s

 8.13. Size:926K  samsung
irfp250a.pdf

IRFP255 IRFP255

Advanced Power MOSFETFEATURESBVDSS = 200 V Avalanche Rugged TechnologyRDS(on) = 0.085 Rugged Gate Oxide Technology Lower Input CapacitanceID = 32 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 200V Low RDS(ON) : 0.071 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Val

 8.14. Size:948K  samsung
irfp254a.pdf

IRFP255 IRFP255

Advanced Power MOSFETFEATURESBVDSS = 250 V Avalanche Rugged TechnologyRDS(on) = 0.14 Rugged Gate Oxide Technology Lower Input CapacitanceID = 25 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 250V Low RDS(ON) : 0.108 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Valu

 8.15. Size:155K  vishay
irfp254n sihfp254n.pdf

IRFP255 IRFP255

IRFP254N, SiHFP254NVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Advanced Process TechnologyVDS (V) 250 Dynamic dV/dt RatingAvailableRDS(on) ()VGS = 10 V 0.125 175 C Operating TemperatureRoHS*COMPLIANTQg (Max.) (nC) 100 Fully Avalanche RatedQgs (nC) 17 Fast SwitchingQgd (nC) 44 Ease of Paralleling Simple Drive RequirementsCo

 8.16. Size:1519K  vishay
irfp254 sihfp254.pdf

IRFP255 IRFP255

IRFP254, SiHFP254Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 250Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.14RoHS* Isolated Central Mounting HoleQg (Max.) (nC) 140 COMPLIANT Fast SwitchingQgs (nC) 24 Ease of ParallelingQgd (nC) 71 Simple Drive RequirementsConfiguration Single Complia

 8.17. Size:123K  vishay
irfp254n irfp254npbf.pdf

IRFP255 IRFP255

IRFP254N, SiHFP254NVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Advanced Process TechnologyVDS (V) 250 Dynamic dV/dt RatingAvailableRDS(on) ()VGS = 10 V 0.125 175 C Operating TemperatureRoHS*COMPLIANTQg (Max.) (nC) 100 Fully Avalanche RatedQgs (nC) 17 Fast SwitchingQgd (nC) 44 Ease of Paralleling Simple Drive RequirementsCo

 8.18. Size:3344K  vishay
irfp250pbf.pdf

IRFP255 IRFP255

PD - 95008IRFP250PbF Lead-Freewww.irf.com 12/11/04IRFP250PbF2 www.irf.comIRFP250PbFwww.irf.com 3IRFP250PbF4 www.irf.comIRFP250PbFwww.irf.com 5IRFP250PbF6 www.irf.comIRFP250PbFTO-247AC Package OutlineDimensions are shown in millimeters (inches)- D -3.65 (.143)5.30 (.209)15.90 (.626) 3.55 (.140)4.70 (.185)15.30 (.602)0.25 (.010) M D B M2.

 8.19. Size:1453K  vishay
irfp250 sihfp250.pdf

IRFP255 IRFP255

IRFP250, SiHFP250Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 200 Repetitive Avalanche Rated AvailableRDS(on) ()VGS = 10 V 0.085 Isolated Central Mounting HoleRoHS*Qg (Max.) (nC) 140COMPLIANT Fast SwitchingQgs (nC) 28 Ease of ParallelingQgd (nC) 74 Simple Drive RequirementsConfiguration Single Compli

 8.20. Size:180K  infineon
irfp250npbf.pdf

IRFP255 IRFP255

PD - 95007AIRFP250NPbFHEXFET Power MOSFETl Advanced Process Technologyl Dynamic dv/dt RatingDVDSS = 200Vl 175C Operating Temperaturel Fast Switchingl Fully Avalanche RatedRDS(on) = 0.075Gl Ease of Parallelingl Simple Drive RequirementsID = 30Al Lead-Free SDescriptionFifth Generation HEXFETs from International Rectifier utilize advanced processingtechni

 8.21. Size:636K  infineon
irfp250mpbf.pdf

IRFP255 IRFP255

PD - 96292IRFP250MPbFHEXFET Power MOSFETl Advanced Process Technologyl Dynamic dv/dt RatingDVDSS = 200Vl 175C Operating Temperaturel Fast Switchingl Fully Avalanche RatedRDS(on) = 0.075Gl Ease of Parallelingl Simple Drive RequirementsID = 30Al Lead-Free SDescriptionFifth Generation HEXFETs from International Rectifier utilize advanced processingtechniq

 8.22. Size:188K  harris semi
irfp250r irfp252r.pdf

IRFP255 IRFP255

 8.23. Size:192K  no
irfp254-257.pdf

IRFP255 IRFP255

 8.24. Size:236K  inchange semiconductor
irfp252.pdf

IRFP255 IRFP255

isc N-Channel MOSFET Transistor IRFP252FEATURESDrain Current I = 27A@ T =25D CDrain Source Voltage-: V = 200V(Min)DSSStatic Drain-Source On-Resistance: R = 0.12(Max)DS(on)Fast Switching100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies

 8.25. Size:260K  inchange semiconductor
irfp250npbf.pdf

IRFP255 IRFP255

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFP250NPBFFEATURESWith TO-247 packagingWith low gate drive requirementsEasy to drive100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source

 8.26. Size:241K  inchange semiconductor
irfp250m.pdf

IRFP255 IRFP255

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFP250MIIRFP250MFEATURESStatic drain-source on-resistance:RDS(on)75mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source V

 8.27. Size:400K  inchange semiconductor
irfp250.pdf

IRFP255 IRFP255

iscN-Channel MOSFET Transistor IRFP250FEATURESLow drain-source on-resistance:RDS(ON) 85m @V =10VGSEnhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER

 8.28. Size:236K  inchange semiconductor
irfp256.pdf

IRFP255 IRFP255

isc N-Channel MOSFET Transistor IRFP256FEATURESDrain Current I = 23A@ T =25D CDrain Source Voltage-: V = 275V(Min)DSSStatic Drain-Source On-Resistance: R = 0.14(Max)DS(on)Fast Switching100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies

 8.29. Size:241K  inchange semiconductor
irfp250n.pdf

IRFP255 IRFP255

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFP250NIIRFP250NFEATURESStatic drain-source on-resistance:RDS(on)75mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source V

 8.30. Size:236K  inchange semiconductor
irfp254a.pdf

IRFP255 IRFP255

isc N-Channel MOSFET Transistor IRFP254AFEATURESDrain Current I = 25A@ T =25D CDrain Source Voltage-: V = 250V(Min)DSSStatic Drain-Source On-Resistance: R = 0.14(Max)DS(on)Fast Switching100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies

 8.31. Size:236K  inchange semiconductor
irfp254.pdf

IRFP255 IRFP255

isc N-Channel MOSFET Transistor IRFP254FEATURESDrain Current I = 23A@ T =25D CDrain Source Voltage-: V = 250V(Min)DSSStatic Drain-Source On-Resistance: R = 0.14(Max)DS(on)Fast Switching100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies

 8.32. Size:236K  inchange semiconductor
irfp253.pdf

IRFP255 IRFP255

isc N-Channel MOSFET Transistor IRFP253FEATURESDrain Current I = 27A@ T =25D CDrain Source Voltage-: V = 150V(Min)DSSStatic Drain-Source On-Resistance: R = 0.12(Max)DS(on)Fast Switching100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies

 8.33. Size:236K  inchange semiconductor
irfp257.pdf

IRFP255 IRFP255

isc N-Channel MOSFET Transistor IRFP257FEATURESDrain Current I = 21A@ T =25D CDrain Source Voltage-: V = 275V(Min)DSSStatic Drain-Source On-Resistance: R = 0.17(Max)DS(on)Fast Switching100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies

Datasheet: IRFP245 , IRFP250 , IRFP250A , IRFP251 , IRFP252 , IRFP253 , IRFP254 , IRFP254A , 7N65 , IRFP260 , IRFP264 , IRFP330 , IRFP331 , IRFP332 , IRFP333 , IRFP340 , IRFP340A .

 

 
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