IXFT50N20 Datasheet. Specs and Replacement

Type Designator: IXFT50N20

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 300 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 50 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 800 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm

Package: TO-268

IXFT50N20 substitution

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IXFT50N20 datasheet

 ..1. Size:104K  ixys
 ixfh42n20 ixfm42n20 ixfh58n20 ixfm58n20 ixft50n20 ixfh50n20 ixfm50n20 ixft58n20.pdf pdf_icon

IXFT50N20

VDSS ID25 RDS(on) HiPerFETTM Power MOSFETs 200 V 42 A 60mW IXFH/IXFM42N20 200 V 50 A 45mW IXFH/IXFM/IXFT50N20 200 V 58 A 40mW IXFH/IXFT58N20 N-Channel Enhancement Mode trr 200 ns High dv/dt, Low trr, HDMOSTM Family TO-247 AD (IXFH) (TAB) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 200 V VDGR TJ = 25 C to 150 C; RGS = 1 MW 200 V TO-268 (D3) Case Style VG... See More ⇒

 ..2. Size:102K  ixys
 ixft50n20.pdf pdf_icon

IXFT50N20

VDSS ID25 RDS(on) HiPerFETTM Power MOSFETs 200 V 42 A 60mW IXFH/IXFM42N20 200 V 50 A 45mW IXFH/IXFM/IXFT50N20 200 V 58 A 40mW IXFH/IXFT58N20 N-Channel Enhancement Mode trr 200 ns High dv/dt, Low trr, HDMOSTM Family TO-247 AD (IXFH) (TAB) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 200 V VDGR TJ = 25 C to 150 C; RGS = 1 MW 200 V TO-268 (D3) Case Style VG... See More ⇒

 7.1. Size:294K  ixys
 ixft50n85xhv ixfh50n85x ixfk50n85x.pdf pdf_icon

IXFT50N20

X-Class HiPerFETTM VDSS = 850V IXFT50N85XHV Power MOSFET ID25 = 50A IXFH50N85X RDS(on) 105m IXFK50N85X TO-268HV (IXFT) N-Channel Enhancement Mode Avalanche Rated G Fast Intrinsic Diode S D (Tab) Symbol Test Conditions Maximum Ratings TO-247 (IXFH) VDSS TJ = 25 C to 150 C 850 V VDGR TJ = 25 C to 150 C, RGS = 1M 850 V VGSS Co... See More ⇒

 7.2. Size:184K  ixys
 ixfh50n60x ixfq50n60x ixft50n60x.pdf pdf_icon

IXFT50N20

Preliminary Technical Information X-Class HiPerFETTM VDSS = 600V IXFT50N60X Power MOSFET ID25 = 50A IXFQ50N60X RDS(on) 73m IXFH50N60X N-Channel Enhancement Mode TO-268 (IXFT) Avalanche Rated Fast Intrinsic Diode G S D (Tab) TO-3P (IXFQ) Symbol Test Conditions Maximum Ratings G VDSS TJ = 25 C to 150 C 600 V D VDGR TJ = 25 C to 1... See More ⇒

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Detailed specifications: IXFX120N65X2, IXFX120N30P3, IXFX100N65X2, IXFT9N80Q, IXFT94N30T, IXFT94N30P3, IXFT70N30Q3, IXFT50N60X, AO3400A, IXFT46N30T, IXFT44N50Q3, IXFT40N50Q, IXFT30N60X, IXFT30N60Q, IXFT30N50Q, IXFT28N50Q, IXFT23N80Q

Keywords - IXFT50N20 MOSFET specs

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