IXFR27N80Q Datasheet and Replacement

IXFK 27N80QHiPerFETTM VDSS = 800 VIXFR 27N80QID25 = 27 APower MOSFETsIXFX 27N80QRDS(on) = 300 mWQ-CLASSSingle MOSFET Die trr 250 nsPLUS 247TM (IXFX)N-Channel Enhancement ModeAvalanche Rated, Low Qg, High dV/dt, Low trr (TAB)GDSymbol Test Conditions Maximum RatingsTO-264 AA (IXFK)VDSS TJ = 25C to 150C 800 VVDGR TJ = 25C to 150C; RGS = 1 MW 800 VG

IXFR 24N80P VDSS = 800 VPolarHVTM HiPerFETID25 = 13 APower MOSFET RDS(on) 420 m (Electrically Isolated Back Surface)trr 200 nsN-Channel Enhancement ModeAvalanche RatedFast Intrinsic DiodeSymbol Test Conditions Maximum RatingsISOPLUS247 (IXFR)E153432VDSS TJ = 25C to 150C 800 VVDGR TJ = 25C to 150C; RG

HiPerFETTM Power VDSS = 1000VIXFR24N100ID25 = 22AMOSFET RDS(on) 390m ISOPLUS247TMt 250ns(Electrically Isolated Back Surface)rrN-Channel Enhancement ModeAvalanche RatedISOPLUS247E153432Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 1000 VVDGR TJ = 25C to 150C, RGS = 1M 1000 VVGSS Co

Advanced Technical InformationVDSS ID25 RDS(on)HiPerFETTM Power MOSFETsIXFR 26N50 500 V 24 A 0.20 WISOPLUS247TMIXFR 24N50 500 V 22 A 0.23 W(Electrically Isolated Back Surface)trr 250 nsN-Channel Enhancement ModeHigh dV/dt, Low trr, HDMOSTM FamilyISOPLUS 247TMSymbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 500 VVDGR TJ = 25C to 150C; RGS = 1 MW 50

IXFC 20N80P VDSS = 800 VPolarHVTM HiPerFETIXFR 20N80P ID25 = 10 APower MOSFET RDS(on) 500 m Electrically Isolated Back Surfacetrr 250 nsN-Channel Enhancement ModeFast Recovery DiodeAvalanche RatedSymbol Test Conditions Maximum RatingsISOPLUS220TM (IXFC)VDSS TJ = 25C to 150C 800 VE153432VDGR TJ = 25C to

Advance Technical InformationHiperFETTM VDSS = 1000VIXFR24N100Q3Power MOSFET ID25 = 18A Q3-Class RDS(on) 490m trr 300ns(Electrically Isolated Tab)N-Channel Enhancement ModeFast Intrinsic RectifierISOPLUS247E153432Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 1000 VVDGR TJ = 25C to 150C, R

VDSS ID25 RDS(on)HiPerFETTM Power MOSFETsIXFR 26N50Q 500 V 24 A 0.20 ISOPLUS247TMIXFR 24N50Q 500 V 22 A 0.23 (Electrically Isolated Back Surface) trr 250 ns N-Channel Enhancement ModeHigh dV/dt, Low t , HDMOSTM FamilyrrSymbol Test Conditions Maximum Ratings ISOPLUS 247TME153432VDSS TJ = 25C to 150C

VDSS = 100 VIXFR 200N10PPolarTM HiPerFETID25 = 133 APower MOSFET RDS(on) 9 m Electrically Isolated TabtRR 150 nsN-Channel Enhancement ModeFast Recovery Diode, Avavanche RatedSymbol Test Conditions Maximum RatingsVDSS TJ = 25C to 175C 100 VISOPLUS247 (IXFR)VDGR TJ = 25C to 175C; RGS = 1 M 100 V E15343